Apparatus and methods for in data path compute operations

ABSTRACT

The present disclosure includes apparatuses and methods for in data path compute operations. An example apparatus includes an array of memory cells. Sensing circuitry is selectably coupled to the array. A plurality of shared input/output (I/O) lines provides a data path. The plurality of shared I/O lines selectably couples a first subrow of a row of the array via the sensing circuitry to a first compute component in the data path to move a first data value from the first subrow to the first compute component and a second subrow of the respective row via the sensing circuitry to a second compute component to move a second data value from the second subrow to the second compute component. An operation is performed on the first data value from the first subrow using the first compute component substantially simultaneously with movement of the second data value from the second subrow to the second compute component.

TECHNICAL FIELD

The present disclosure relates generally to semiconductor memory andmethods, and more particularly, to apparatuses and methods for in datapath compute operations.

BACKGROUND

Memory devices are typically provided as internal, semiconductor,integrated circuits in computers or other electronic systems. There aremany different types of memory including volatile and non-volatilememory. Volatile memory can require power to maintain its data (e.g.,host data, error data, etc.) and includes random access memory (RAM),dynamic random access memory (DRAM), static random access memory (SRAM),synchronous dynamic random access memory (SDRAM), and thyristor randomaccess memory (TRAM), among others. Non-volatile memory can providepersistent data by retaining stored data when not powered and caninclude NAND flash memory, NOR flash memory, and resistance variablememory such as phase change random access memory (PCRAIVI), resistiverandom access memory (RRAIVI), and magnetoresistive random access memory(MRAM), such as spin torque transfer random access memory (STT RAM),among others.

Electronic systems often include a number of processing resources (e.g.,one or more processors), which may retrieve and execute instructions andstore the results of the executed instructions to a suitable location. Aprocessor can comprise a number of functional units such as arithmeticlogic unit (ALU) circuitry, floating point unit (FPU) circuitry, and acombinatorial logic block, for example, which can be used to executeinstructions by performing an operation on data (e.g., one or moreoperands). As used herein, an operation can be, for example, a Booleanoperation, such as AND, OR, NOT, NOT, NAND, NOR, and XOR, and/or otheroperations (e.g., invert, shift, arithmetic, statistics, among manyother possible operations). For example, functional unit circuitry maybe used to perform the arithmetic operations, such as addition,subtraction, multiplication, and division on operands, via a number ofoperations.

A number of components in an electronic system may be involved inproviding instructions to the functional unit circuitry for execution.The instructions may be executed, for instance, by a processing resourcesuch as a controller and/or host processor. Data (e.g., the operands onwhich the instructions will be executed) may be stored in a memory arraythat is accessible by the functional unit circuitry. The instructionsand/or data may be retrieved from the memory array and sequenced and/orbuffered before the functional unit circuitry begins to executeinstructions on the data. Furthermore, as different types of operationsmay be performed in one or multiple clock cycles through the functionalunit circuitry, intermediate results of the instructions and/or data mayalso be sequenced and/or buffered. A sequence to complete an operationin one or more clock cycles may be referred to as an operation cycle.Time consumed to complete an operation cycle costs in terms ofprocessing and computing performance and power consumption, of acomputing apparatus and/or system.

In many instances, the processing resources (e.g., processor andassociated functional unit circuitry) may be external to the memoryarray, and data is accessed via a bus between the processing resourcesand the memory array to execute a set of instructions. Processingperformance may be improved in a processing-in-memory (PIM) device, inwhich a processing and/or logic resource may be implemented internallyand/or near to a memory (e.g., directly on a same chip as the memoryarray). A processing-in-memory (PIM) device may save time by reducingand eliminating external communications and may also conserve power.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1A is a block diagram of an apparatus in the form of a computingsystem including a memory device in accordance with a number ofembodiments of the present disclosure.

FIG. 1B is another block diagram of an apparatus in the form of acomputing system including a memory device having a shared input/out(I/O) line in a data path local to bank sections of an array inaccordance with a number of embodiments of the present disclosure.

FIG. 2 is a schematic diagram illustrating circuitry of a memory device,the circuitry including a sense amplifier and a compute component, whichmay be included in sensing circuitry and/or logic stripes, in accordancewith a number of embodiments of the present disclosure.

FIG. 3 is a schematic diagram illustrating circuitry for a plurality ofshared I/O lines in a data path of an array in accordance with a numberof embodiments of the present disclosure.

FIG. 4 is a block diagram illustrating a plurality of sections of anarray coupled to a compute unit, having a plurality of logic stripes, bya plurality of shared I/O lines in a data path local to the array inaccordance with a number of embodiments of the present disclosure.

FIG. 5 is a block diagram illustrating an example of a controller of amemory device in accordance with a number of embodiments of the presentdisclosure.

FIG. 6 is a block diagram illustrating another example of a controllerof a memory device, the controller to control movement of data values toa compute unit, having a plurality of logic stripes, using a shared I/Oline in accordance with a number of embodiments of the presentdisclosure.

FIG. 7 is a schematic diagram illustrating compute components of a logicstripe in accordance with a number of embodiments of the presentdisclosure.

FIG. 8 is a logic table illustrating selectable logic operation resultsimplemented by compute components shown in FIG. 7 in accordance with anumber of embodiments of the present disclosure.

FIGS. 9A-9C are schematic diagrams illustrating implementation of anumber of scheduling policies for performance of operations on datavalues in a memory device in accordance with a number of embodiments ofthe present disclosure.

DETAILED DESCRIPTION

The present disclosure includes apparatuses and methods for in data pathcompute operations. In at least one embodiment, an apparatus includes amemory device having an array of memory cells and sensing circuitryselectably coupled to the array of memory cells. In various embodiments,the memory device may be a processing in memory (PIM) device and thesensing circuitry may include a sense amplifier. A plurality ofinput/output (I/O) lines is shared as a data path for in data pathcompute operations associated with the array (e.g., the sensingcircuitry may be selectably coupled to columns of memory cells and/orshared I/O lines).

The plurality of shared I/O lines selectably couples a first subrow of arow of the array via the sensing circuitry to a first compute componentin the data path to move a first data value from the first subrow to thefirst compute component. As used herein, a “subrow” is intended to meana predetermined subset of memory cells of the row of the array thatstores a predetermined number of data values. For example, one subrow ofa row may be a predetermined 1024 (1K) memory cells of a row having16,384 (16K) memory cells, thereby resulting in 16 subrows of the row(e.g., as shown at 428-1, 428-2, . . . , 428-16 and described inconnection with FIG. 4 and elsewhere herein). The plurality of sharedI/O lines selectably couples a second subrow of the respective row viathe sensing circuitry to a second compute component in the data path tomove a second data value from the second subrow to the second computecomponent. An operation may be performed (e.g., as directed by acontroller) on the first data value from the first subrow using thefirst compute component substantially simultaneously with movement ofthe second data value from the second subrow to the second computecomponent.

Ordinal numbers such as first and second are used herein to assist incorrelating and/or distinguishing between similar and/or selectablycoupled components (e.g., subarrays of memory cells, data values andassociated compute components, subrows of memory cells and associatedcompute components, logic stripes and associated compute components,connection circuitry and associated compute components and/or logicstripes, etc.) and are not used to indicate a particular ordering and/orrelationship between the components, unless the context clearly dictatesotherwise (e.g., by using terms such as adjacent, etc.).

For example, movement of a first data value from a first subrow of afirst row of a memory array via the shared I/O lines to a first computecomponent of a first logic stripe is intended to indicate that aparticular data value from a particular subrow (which may be, but is notnecessarily, the first subrow in a sequence of subrows) of a particularrow may be moved to a particular compute component of a particular logicstripe (each of which may be, but is not necessarily, the first in asequence of compute components and/or logic stripes). Similarly,movement of a second data value from a second subrow of the first row(which may be a next subrow adjacent the previously mentioned firstsubrow but may be, but is not necessarily, the second subrow in thesequence of subrows) is intended to indicate that a particular datavalue from the second subrow of the same row may be moved to aparticular compute component of a different logic stripe. For example,referring to the second data value being moved to the second computecomponent of the second logic stripe is used to associate the seconddata value with a compute component and/or a logic stripe that isdifferent than those previously referred to as the first of suchcomponents. As such, the second compute component may be, but is notnecessarily, the first compute component in a sequence of computecomponents of the second logic stripe and/or the second logic stripe maybe, but is not necessarily, the second logic stripe in a sequence oflogic stripes.

Similarly, as described herein, a controller being configured to direct,in a first operation cycle, a first parallel movement (e.g., via theshared I/O lines) of a number of a plurality of data values of the firstsubrow to a corresponding number of a plurality of first computecomponents of the first logic stripe is intended to indicate that thecontroller may direct performance in a specific operation cycle (e.g.,in a time frame of around 2 to 60 nanoseconds (ns)) of movement of aparticular number corresponding to the plurality of data values of thefirst subrow to the same number of compute components of the first logicstripe. The controller being configured to direct, in a second operationcycle, a second parallel movement of a number of a plurality of datavalues of the second subrow to a corresponding number of a plurality ofsecond compute components of the second logic stripe is intended toindicate that in the second operation cycle (which may be, but is notnecessarily, the next, e.g., adjacent, 2-60 ns time frame) thecontroller may direct performance of movement of a particular numbercorresponding to the plurality of data values of the second subrow tothe same number of compute components of the second logic stripe. Theparticular number of the plurality of data values of the second subrowand/or of the second compute components of the second logic stripe maybe, but is not necessarily, the same number as that of the data valuesof the first subrow and/or of the first compute components of the firstlogic stripe.

A shared I/O line (e.g., as shown at 155 and described in connectionwith FIG. 1B and elsewhere herein) serves as a data path associated withthe memory array (e.g., as shown at 130 and described in connection withFIG. 1A and elsewhere herein). The shared I/O line couples sensingcircuitry (e.g., as shown at 150 and described in connection with FIG.1A and elsewhere herein) to a compute component (e.g., as shown at 231and described in connection with FIG. 2 and elsewhere herein) in thedata path of the shared I/O line. The compute component, associated withthe data path of the shared I/O line, has a pitch equal to that of thedata path and that is a function of a pitch of digit lines (e.g., asshown at 205 and described in connection with FIG. 2 and elsewhereherein) to the array of memory cells. For example, the compute componenthas a pitch that is an integer multiple of the pitch of digit lines tothe array of memory cells.

As used herein, a “shared I/O line” is intended to a mean an I/O linethat is local to the array in a data path that has a pitch which is afunction of a pitch of the array of memory cells. The shared I/O may belocated on a bank (e.g., as shown at 121-1 and described in connectionwith FIG. 1B and elsewhere herein) of the array of memory and may bemultiplexed to a plurality of columns of the array (e.g., complementarydigit lines to a DRAM array). The shared I/O is different and distinctfrom the I/O circuity associated with the array that is intended tomoved data to and from the array according to an array protocol such asDDR4 and/or to move data onto and off of a memory device (e.g., as shownat 120 and described in connection with FIG. 1A and elsewhere herein) inconnection with a host (e.g., as shown at 110 and described inconnection with FIG. 1A and elsewhere herein).

In some embodiments, the compute component may be in a logic stripe(e.g., as shown at 124-1, 124-2, . . . , 124-N and described inconnection with FIG. 1B and elsewhere herein) associated with the sharedI/O line of the data. The array may have a plurality of shared I/O linesfor the data path local to the array and each logic stripe may have aplurality of compute components (e.g., as shown at 431-1, 431-2, . . . ,431-Z and described in connection with FIG. 4 and elsewhere herein).Each of the plurality of compute components is associated with at leastone of the plurality of shared I/O lines of the data path. In someembodiments, one of each of the plurality of compute components may beassociated with a particular one of the plurality of shared I/O lines ofthe data path.

In various embodiments, each of the plurality of compute components maybe shifted to another one of the plurality of shared I/O lines of thedata path. For example, the number of columns and/or memory cells (e.g.,16,384 columns and/or memory cells, among other possible configurations)of a row (e.g., as shown at 319 and described in connection with FIG. 3and elsewhere herein) may be multiplexed such that, for example, 16subrows are obtained by selecting for coupling to, and parallel movementof data values via, the plurality of shared I/O lines (e.g., 1024individual shared I/O lines) a contiguous plurality of columns and/ormemory cells in the row (16 subrows each having 1024 adjacent columnsand/or memory cells, as shown in FIG. 4) such that data values from thecontiguous memory cells (e.g., 1024 data values) may be moved inparallel. Alternatively or in addition, the number of columns and/ormemory cells of the row may be multiplexed, for example, such that the16 subrows may be obtained by selecting for coupling to, and parallelmovement of data values, via the shared I/O lines, every sixteenthcolumn and/or memory cell in the row such that data values from everysixteenth memory cell (e.g., 1024 data values) may be moved in parallel.In some embodiments, the array may be a DRAM array and sensing circuitryused to sense and/or amplify data values in selected memory cells mayinclude a sense amplifier and/or a compute component.

The memory device 120 includes a controller (e.g., as shown at 140 anddescribed in connection with FIG. 1A and elsewhere herein). Among otherfunctions, the controller 140 may be configured to direct movement(e.g., via movement component 171 associated with the controller) of adata value from a row of memory cells (e.g., a selected subrow thereof)in the array to a compute component associated with one of the pluralityof shared I/O lines of the data path.

As described in more detail below, the embodiments may allow a hostsystem to allocate a number of locations (e.g., arrays, subarrays and/orportions of subarrays, such as row and subrows thereof) in one or moreDRAM banks to hold (e.g., store) and/or process data. A host system anda controller may perform the address resolution on an entire block ofprogram instructions (e.g., PIM command instructions) and data anddirect (e.g., control) allocation, storage, and/or movement (e.g., flow)of data and commands into allocated locations (e.g., subarrays andportions of subarrays) within a destination (e.g., target) bank. Writingand/or reading data and/or executing commands in the DRAM array (e.g.,movement of data values for performing operations by a logic stripe, asdescribed herein) may utilize a normal DRAM read/write path to the DRAMdevice. As the reader will appreciate, while a DRAM-style memory arrayfor a PIM device is discussed with regard to examples of in data pathcompute operations presented herein, embodiments are not limited to aPIM DRAM implementation.

The memory devices described herein may use a number of controllers fora bank of subarrays, controllers for individual subarrays, and/orcontrollers for latch components (e.g., each controller being asequencer, a state machine, a microcontroller, a sub-processor, ALUcircuitry, or some other type of controller) to execute a set ofinstructions to perform an operation on data (e.g., one or moreoperands). As used herein, an operation may be, for example, a Booleanlogical operation, such as AND, OR, NOT, NOT, NAND, NOR, and XOR, and/orother operations (e.g., invert, shift, arithmetic, statistics, amongmany other possible operations). For example, functional unit circuitrymay be used to perform the arithmetic operations, such as addition,subtraction, multiplication, and division on operands, via a number oflogical operations.

The present disclosure describes enablement of in data path computeoperations (e.g., PIM operations, such as AND, OR, refresh, row copy,shift, add, multiply, etc.) to be performed on data values stored bymemory cells (e.g., when moved to a compute component, as describedherein) substantially simultaneously with performance of, for example,read and/or write operations on data values from a same bank, a samesubarray in the same bank, and/or a same row in the same subarray (e.g.,in a DRAM array, among other types of memory arrays). For example, themovement operation may be performed on data values stored in a subrow ofmemory cells in a row of a subarray substantially simultaneously withperformance of, for example, logical operations on the same data valuespreviously moved to a compute component in the data path (e.g., to aselected logic stripe) as directed by a controller and/or a host, asdescribed herein.

Accordingly, when a subrow is activated to be sensed in an array, aplurality of data values stored by memory cells of the subrow (e.g.,data values for the entire subrow) may be moved (e.g., copied,transferred, and/or transported) to a corresponding plurality of computecomponents (e.g., that each form at least a portion of a logic stripe424 in a compute unit, as shown at 460 and described in connection withFIG. 4 and elsewhere herein) in a data path associated with the array. Aplurality of shared I/O lines couples the data values to the pluralityof compute components in the data path. In some embodiments, a pluralityof compute components of a number of logic stripes in a compute unit maybe associated with each bank section of a bank of an array. The computecomponent associated with a shared I/O may be configured to couple(e.g., directly or indirectly connect, as described herein) to a datapath of the shared I/O local to the array. In some embodiments, thecompute components 431, logic stripes 424, and/or compute units 460 andmay further be coupled to a data bus connected to the host 110 off thememory device and/or to a data bus that connects a bank of an array toanother bank of an array on the memory device.

The present disclosure describes, in some embodiments, that when a rowis sensed, the data values in the row (e.g., the data values from all16,384 (16K) memory cells in the row) may be moved to be stored (e.g.,cached) in a latch component (e.g., a sense amplifier) to be furthermoved on a shared I/O line to a logic stripe in a compute unit in thedata path of the shared I/O that is local to the array. In someembodiments, 2048 (2K) shared I/O lines may be configured as a 2K bitwide shared I/O line. According to some embodiments, a number of cyclesfor moving the data from a first row in a source location to a secondrow in a destination location may be determined by dividing a number ofcolumns in the array intersected by a row of memory cells in the arrayby the 2K bit width of the plurality of shared I/O lines. For example,an array (e.g., a bank, a bank section, or a subarray thereof) may have16K columns, which may correspond to 16K data values in a row, whichwhen divided by the 2K bit width of the plurality of shared I/O linesintersecting the row may yield eight cycles, each separate cycle beingat substantially the same point in time (e.g., in parallel) for movementof each 2K bit fraction of the data in the row such that all 16K databits in the row are moved after completion of the eight cycles. Forexample, only one of a plurality (e.g., a subset of eight, as shown inFIG. 3) of the sense amplifiers 306 or the compute components 331 in thesensing circuitry 350 of the source location may be coupled at a time toa respective shared I/O line 355. In embodiments having 16K shared I/Olines, all 16K data bits may be moved in parallel.

In one example, 2K data values may be multiplexed at a time (e.g., inparallel) through 2K shared I/O lines from 2K sense amplifiers of the16K columns (e.g., digit line pairs) by an eight way multiplexer to 2Kcompute components (e.g., to store and/or process a total of 2K bits) ineach logic stripe (e.g., each logic stipe having 2K compute components)of a compute unit. In some embodiments, the compute unit may have eightlogic stripes to store 2K data values per logic stripe, thereby beingcapable of storing 16K data values per compute unit that have been movedin eight cycles by the 2K shared I/O lines. In another example, 1K datavalues may be multiplexed at a time through 1K shared I/O lines from 1Ksense amplifiers of the 16K columns by a sixteen way multiplexer to 1Kcompute components (e.g., to store and/or process a total of 1K bits) ina logic stripe (e.g., each logic stipe having 1K compute components) ofa compute unit. In some embodiments, the compute unit (e.g., as shown at460 and described in connection with FIG. 4) may have sixteen (16) logicstripes to store 1K data values per logic stripe, thereby being capableof storing 16K data values per compute unit that have been moved in 16cycles by the 1K shared I/O lines. For example, each of the 16 logicstripes (e.g., shown at 424-1, 424-2, . . . , 424-N and described inconnection with FIG. 4) and the 1K compute components (e.g., shown at431-1, 432-2, . . . , 432-Z and described in connection with FIG. 4) ineach logic stripe may correspond the a subrow (e.g., shown at 428-1,428-2, . . . , 424-16 and described in connection with FIG. 4) fromwhich 1K data values are moved (e.g., multiplexed) through respective 1Kshared I/O lines.

As such, the memory cells in the bank, the subarray, the row, and/or thesubrow from which the data values were moved may be available to performoperations on other data values stored therein (e.g., by having theoriginal data values moved to a logic stripe in the compute unit in thedata path of the shared I/O that is local to the array). In variousembodiments, each logic stripe may include a number of a plurality oflatches, corresponding to (e.g., the same as or an integer multiple of)the number of compute components, to store a plurality of data valuesmoved from another bank, subarray, row, and/or subrow to enableperformance of a number of operations (e.g., logical operations) on thedata values stored by the latches associated with the compute component.

As used herein, data movement is an inclusive term that includes, forinstance, copying, transferring, and/or transporting data values from asource location to a destination location. Data can, for example, bemoved from a sense amplifier of sensing circuitry of a subarray to acompute component in a logic stripe in a data path of a shared I/O linelocal to the array. Copying the data values may indicate that the datavalues stored (cached) in the sense amplifiers are copied and moved to acompute component in a logic stripe in the data path of the shared I/Oline local to the array and that the original data values stored in thesubrow of the row may remain unchanged. Transferring the data values mayindicate that the data values stored (cached) in the sense amplifiersare copied and moved to a compute component in a logic stripe in thedata path of the shared I/O line local to the array and that at leastone of the original data values stored in the subrow of the row may bechanged (e.g., by being erased and/or by a subsequent write operation,as described herein). Transporting the data values may be used toindicate the process by which the copied and/or transferred data valuesare moved (e.g., by the data values being placed on the shared I/O linefrom the source location and transported to the destination location).

Implementations of DRAM architecture for in data path compute operationsmay perform processing at the sense amplifier and compute componentlevel (e.g., in a logic stripe). Implementations of the DRAMarchitecture for in data path compute operations may allow only a finitenumber of memory cells to be connected to the compute components in alogic stripe in the data path of the shared I/O lines (e.g., 1K memorycells as given in one example above). An array may include from around8K to around 16K columns (pairs of digit lines) and associated senseamplifiers. In some embodiments, for example as shown in FIG. 4, a banksection 423 of an array may be divided into four quadrants and eachquadrant may have a plurality of subarrays (e.g., 32 subarrays). Eachsubarray may have a plurality of rows (e.g., 512 rows) and may becoupled to 16K columns. Each row may, as described herein, may include16 subrows each having 1K memory cells (e.g., selection of which memorycells constitute the 1K coupled to particular shared I/O lines viasensing circuitry being determined by multiplexing). Embodiments,however, are not limited to this illustrative example.

In some embodiments, a plurality of logic stripes as part of a computeunit may be associated with each quadrant. For example each logic stripein a compute unit in the data path of the shared I/O lines may beassociated with a subarray in each quadrant of a bank. Thus, in theabove example, a compute unit in the data path of the shared I/O lineslocal to the array may have 128 logic stripes (4 quadrants, one logicstripe for each of 32 subarrays per quadrant). Embodiments, however, arenot limited to this illustrative example. A bank of memory (e.g., ofmemory cells in a DRAM array) may, in some embodiments, include 64K rowsby 16K columns of DRAM to provide around 1 gigabit of memory.

The present disclosure describes a compute component in a data path of ashared I/O line local to an array that may include a plurality oflatches that function as sense amplifiers to store (cache) data valuesmoved (e.g., copied, transferred, and/or transported) from sensingcircuitry associated with the array. The compute components may be in aplurality of logic stripes in a compute unit in the data path of aplurality of shared I/O lines local to the array such that the pluralityof logic stripes each includes a subset of a total number of computecomponents. The compute components 431-1, . . . , 431-Z of logic stripes424-1, . . . , 424-N (e.g., as shown and described in connection withFIG. 4) may have a pitch equal to the pitch of the data path of theplurality of shared I/O lines 455 local to a bank 121-1 of the array. Insome embodiments, the pitch of the data path of the plurality of sharedI/O lines 455 may be a function of a pitch of the digit lines of anarray of memory cells (e.g., as shown at 205-1 and 205-2 in FIGS. 2 and305-1 and 305-2 in FIG. 3). The compute components 431-1, . . . , 431-Zand/or logic stripes 424-1, . . . , 424-N may be coupled to the datapath of the plurality of shared I/O lines 455 by sensing circuitry 150(e.g., sense amplifiers 206 of the sensing circuitry) and/or additionallatches 170, as shown in FIG. 1A.

As such, the architecture for in data path compute operations mayfacilitate movement (e.g., copying, transferring, and/or transporting)of data values stored in a subrow of a row of an array to the computecomponents 431-1, . . . , 431-Z and/or logic stripes 424-1, . . . ,424-N in the data path of the plurality of shared I/O lines local to thearray. Sensing circuitry 150 having sense amplifiers, which in someembodiments may also include compute components as shown in FIG. 2, maycouple the memory cells from a multiplexed column of memory cells in anarray to the compute components 431-1, . . . , 431-Z and/or logicstripes 424-1, . . . , 424-N in a compute unit in the data path of theplurality of shared I/O lines 455. In this manner, the computecomponents 431-1, . . . , 431-Z and/or logic stripes 424-1, . . . ,424-N may be indirectly coupled to the memory cells of a column throughthe plurality of shared I/O lines 455 via column select circuitryoperating as a multiplexer (e.g., as shown at 358 and described inconnection with FIG. 3) and associated select logic (as discussed inconnection with FIGS. 3-7).

The memory array architecture described herein may provide a number ofbenefits in addition to those just described. Overall processing speedmay be increased by, for example, enabling PIM operations to beperformed on data stored by memory cells in parallel with performance ofother operations (e.g., performance of DDR4 I/O operations). Forexample, PIM operations may be performed in a compute unit having aplurality of compute components 431-1, . . . , 431-Z and/or logicstripes 424-1, . . . , 424-N in the data path of the shared I/O lines455 local to the array. By way of example and not by way of limitation,once data values are loaded to the plurality of compute components431-1, . . . , 431-Z and/or logic stripes 424-1, . . . , 424-N in thecompute unit from the subrows of the array, compute operations may becontrolled in the compute unit at speeds of 2 ns without having to movethe data values back into the rows, as compared to an example timerequired to fire the rows in the array of 60 ns. In this manner, thecompute components 431-1, . . . , 431-Z and/or logic stripes 424-1, . .. , 124-N (along with associated latches) may provide storage of themoved data values for performance of certain functions (e.g., AND, OR,NOR, XOR, add, subtract, multiply, divide, etc.) while the original datavalues of a subrow may be saved back to a row, saved elsewhere, and/orwritten over. As discussed more in connection with FIGS. 5 and 6 theoperations of the compute components 431-1, . . . , 431-Z and/or logicstripes 424-1, . . . , 424-N in the compute unit in the data path of theplurality of shared I/O lines may be directed by a controller 140 of abank 121.

In the following detailed description of the present disclosure,reference is made to the accompanying drawings that form a part hereof,and in which is shown by way of illustration how one or more embodimentsof the disclosure may be practiced. These embodiments are described insufficient detail to enable those of ordinary skill in the art topractice the embodiments of this disclosure, and it is to be understoodthat other embodiments may be utilized and that process, electrical, andstructural changes may be made without departing from the scope of thepresent disclosure.

As used herein, designators such as “X”, “Y”, “Z”, “N”, “M”, etc.,particularly with respect to reference numerals in the drawings,indicate that a number of the particular feature so designated may beincluded. It is also to be understood that the terminology used hereinis for the purpose of describing particular embodiments only, and is notintended to be limiting. As used herein, the singular forms “a”, “an”,and “the” can include both singular and plural referents, unless thecontext clearly dictates otherwise. In addition, “a number of”, “atleast one”, and “one or more” (e.g., a number of memory arrays) canrefer to one or more memory arrays, whereas a “plurality of” is intendedto refer to more than one of such things. Furthermore, the words “can”and “may” are used throughout this application in a permissive sense(i.e., having the potential to and/or being able to in at least someembodiments described herein), not in a mandatory sense (i.e., must).The term “include,” and derivations thereof, means “including, but notlimited to”. The terms “couple”, “coupled”, and “coupling” mean to bedirectly or indirectly connected physically or for access to andmovement (transmission) of commands and/or data, as appropriate to thecontext. The terms “data” and “data values” are used interchangeablyherein and can have the same meaning, as appropriate to the context.

As described herein, the plurality of shared I/O lines 455 may beselectably shared by a plurality of subarrays, bank sections, quadrants,rows, subrows, and/or particular columns of memory cells via selectlogic coupled to each array. For example, the sensing circuitry 150and/or additional latches 170, including a sense amplifier and selectlogic for multiplexing each of a selectable number of subsets of anumber of columns (e.g., 8, 16, etc., column subsets of a total numberof columns) may be selectably coupled to each of the plurality of sharedI/O lines 455 for data values to be moved to the plurality of computecomponents 431-1, . . . , 431-Z and/or logic stripes 424-1, . . . ,424-N in a compute unit 460 in a data path of the plurality of sharedI/O lines 455. In some embodiments, the plurality of compute components431-1, . . . , 431-Z selectably coupled to each of the plurality ofshared I/O lines 455 may correspond to the number of columns selectablycoupled to the plurality of shared I/O lines (e.g., 1K, 2K, etc.).Because the singular forms “a”, “an”, and “the” can include bothsingular and plural referents herein, “a shared I/O line” can be used torefer to “a pair of complementary shared I/O lines”, unless the contextclearly dictates otherwise. Moreover, “shared I/O lines” is anabbreviation of “plurality of shared I/O lines”.

The figures herein follow a numbering convention in which the firstdigit or digits correspond to the figure number and the remaining digitsidentify an element or component in the figure. Similar elements orcomponents between different figures may be identified by the use ofsimilar digits. For example, 108 may reference element “08” in FIG. 1A,and a similar element may be referenced as 208 in FIG. 2. As will beappreciated, elements shown in the various embodiments herein can beadded, exchanged, and/or eliminated so as to provide a number ofadditional embodiments of the present disclosure. In addition, theproportion and/or the relative scale of the elements provided in thefigures are intended to illustrate certain embodiments of the presentdisclosure and should not be taken in a limiting sense.

FIG. 1A is a block diagram of an apparatus in the form of a computingsystem 100 including a memory device 120 which includes a memory array130 in accordance with a number of embodiments of the presentdisclosure. As used herein, a memory device 120, controller 140, memoryarray 130, sensing circuitry 150, and/or a number of additional latches170 might also be separately considered an “apparatus.”

As used herein, the additional latches are intended to mean additionalfunctionalities (e.g., amplifiers, select logic) that sense, couple,and/or move (e.g., read, store, cache) data values of memory cells in anarray and that are distinct from the plurality of compute components431-1, . . . , 431-Z and/or logic stripes 424-1, . . . , 424-N in acompute unit 460 in a data path of the plurality of shared I/O lines 455shown in FIGS. 3-4 and 6-7. The logic stripes 124-1, . . . , 124-N in adata path of a plurality of shared I/O lines 155 local to the array, asshown in FIG. 1B, may be associated with various bank sections 123-1, .. . , 123-N of memory cells in the bank 121-1. The bank 121-1 may be oneof a plurality of banks on the memory device 120.

System 100 in FIG. 1A includes a host 110 coupled (e.g., connected) tothe memory device 120. Host 110 may be a host system such as a personallaptop computer, a desktop computer, a digital camera, a smart phone, ora memory card reader, among various other types of hosts. Host 110 mayinclude a system motherboard and/or backplane and may include a numberof processing resources (e.g., one or more processors, microprocessors,or some other type of controlling circuitry). The system 100 may includeseparate integrated circuits or both the host 110 and the memory device120 may be on the same integrated circuit. The system 100 may be, forinstance, a server system and/or a high performance computing (HPC)system and/or a portion thereof. Although the examples shown in FIG. 1Aillustrates a system having a Von Neumann architecture, embodiments ofthe present disclosure may be implemented in non-Von Neumannarchitectures, which may not include one or more components (e.g., CPU,ALU, etc.) often associated with a Von Neumann architecture.

For clarity, the system 100 has been simplified to focus on featureswith particular relevance to the present disclosure. The memory array130 may be a DRAM array, SRAM array, STT RAM array, PCRAM array, TRAMarray, RRAM array, NAND flash array, and/or NOR flash array, among othertypes of arrays. The array 130 may include memory cells arranged in rowscoupled by access lines (which may be referred to herein as word linesor select lines) and columns coupled by sense lines (which may bereferred to herein as data lines or digit lines). Although a singlearray 130 is shown in FIG. 1A, embodiments are not so limited. Forinstance, memory device 120 may include a number of arrays 130 (e.g., anumber of banks of DRAM cells, NAND flash cells, etc.).

The memory device 120 may include address circuitry 142 to latch addresssignals provided over a data bus 156 (e.g., an I/O bus connected to thehost 110) by I/O circuitry 144 (e.g., provided to external ALU circuitryand/or to DRAM DQs via local I/O lines and global I/O lines). As usedherein, DRAM DQs may enable input of data to and/or output of data froma bank (e.g., from and/or to the controller 140 and/or host 110) via abus (e.g., data bus 156). During a write operation, a voltage (high=1,low=0) may be applied to a DQ (e.g., a pin). This voltage may betranslated into an appropriate signal and stored by a selected memorycell. During a read operation, a data value read from a selected memorycell may appear at the DQ once access is complete and the output isenabled (e.g., by the output enable signal being low). At other times,DQs may be in a high impedance state, such that the DQs do not source orsink current and do not present a signal to the system. This also mayreduce DQ contention when two or more devices (e.g., banks) share acombined data bus, as described herein. Such DQs are separate anddistinct from the plurality of shared I/O lines 155 (in FIG. 1B) in adata path local to the array 130.

Status and exception information may be provided from the controller 140of the memory device 120 to a channel controller 143, for example,through an out-of-band (00B) bus 157 (e.g., high-speed interface (HSI)),which in turn may be provided from the channel controller 143 to thehost 110. The channel controller 143 may include a logic component toallocate a plurality of locations (e.g., controllers for subarrays) inthe arrays of each respective bank to store bank commands, applicationinstructions (e.g., for sequences of operations), and arguments (PIMcommands) for various banks associated with operations for each of aplurality of memory devices 120. The channel controller 143 may dispatchcommands (e.g., PIM commands) to the plurality of memory devices 120 tostore those program instructions within a given bank 121 (e.g., 121-1 ofFIG. 1B) of a memory device 120.

Address signals are received through address circuitry 142 and decodedby a row decoder 146 and a column decoder 152 to access the memory array130. Data may be sensed (read) from memory array 130 by sensing voltageand/or current changes on sense lines (digit lines) using a number ofsense amplifiers, as described herein, of the sensing circuitry 150. Asense amplifier may read and latch a page (e.g., a row) of data from thememory array 130. Additional compute circuitry, as described herein, maybe coupled to the sensing circuitry 150 and may be used in combinationwith the sense amplifiers to sense, store (e.g., cache and/or buffer),perform compute functions (e.g., operations), and/or move data. The I/Ocircuitry 144 may be used for bi-directional data communication withhost 110 over the data bus 156 (e.g., a 64 bit wide data bus). The writecircuitry 148 may be used to write data to the memory array 130.

Controller 140 (e.g., bank control logic, sequencer and timing circuitryshown in FIG. 5) may decode signals (e.g., commands) provided by controlbus 154 from the host 110. These signals may include chip enablesignals, write enable signals, and/or address latch signals that may beused to control operations performed on the memory array 130, includingdata sense, data store, data movement (e.g., copying, transferring,and/or transporting data values), data write, and/or data eraseoperations, among other operations. In various embodiments, thecontroller 140 may be responsible for executing instructions from thehost 110 and/or accessing the memory array 130. The controller 140 maybe a state machine, a sequencer, or some other type of controller. Thecontroller 140 may control shifting data (e.g., right or left) in a rowof an array (e.g., memory array 130) and execute microcode instructionsto perform operations such as compute operations (e.g., AND, OR, NOR,XOR, add, subtract, multiply, divide, etc.).

Examples of the sensing circuitry 150 are described further below (e.g.,in FIGS. 2 and 3). For instance, in some embodiments, the sensingcircuitry 150 may include a number of sense amplifiers. In someembodiments, the sensing circuitry 150 may include the number of senseamplifiers and a corresponding number of compute components, which mayserve as an accumulator and may be used to perform operations in eachsubarray (e.g., on data associated with complementary sense lines) inaddition to the in data path compute operations described herein.

In some embodiments, the sensing circuitry 150 may be used to performoperations using data stored by memory array 130 as inputs andparticipate in movement of the data for copy, transfer, transport,writing, logic, and/or storage operations to a different location in thememory array 130 and/or in logic stripes 124 without transferring thedata via a sense line address access (e.g., without firing a columndecode signal). As such, in some embodiments, various compute functionsmay be performed using, and within, sensing circuitry 150 rather than(or in association with) being performed by processing resourcesexternal to the sensing circuitry 150 (e.g., by a processor associatedwith host 110 and/or other processing circuitry, such as ALU circuitry,located on device 120, such as on controller 140 or elsewhere). However,in addition, embodiments described herein may perform in data pathcompute functions and/or operations on data values moved to a pluralityof compute components 431-1, . . . , 431-Z and/or logic stripes 124-1, .. . , 124-N in a compute unit from the rows of the array. And as anexample, according to some embodiments, compute operations may becontrolled in the compute unit at speeds of 2 ns without having to movethe data values back into the rows, as compared to an example timerequired to fire the rows in the array of 60 ns.

In various previous approaches, data associated with an operand, forinstance, would be read from memory via sensing circuitry and providedto external ALU circuitry via I/O lines (e.g., via local I/O linesand/or global I/O lines). The external ALU circuitry could include anumber of registers and would perform compute functions using theoperands, and the result would be transferred back to the array via theI/O circuitry 144.

In contrast, embodiments herein perform compute functions on datavalues, moved to a plurality of compute components 431-1, . . . , 431-Zand/or logic stripes 124-1, . . . , 124-N via a plurality of shared I/Olines 155 from the rows and/or subrows of the array, in a compute unitin a data path local to the array. Additionally, sensing circuitry 150may be configured to perform operations on data stored by memory array130 and store the result back to the memory array 130 without enablingan I/O line (e.g., a local I/O line) coupled to the sensing circuitry150. However, once loaded, compute operations may be controlled in thecompute unit much faster (e.g., at speeds of 2 ns) without having tomove the data values back into the rows and/or subrows, as compared toan example time required to fire the rows in the array (e.g., 60 ns).The sensing circuitry 150 may be formed on pitch with the memory cellsof the array. The plurality of compute components 431-1, . . . , 431-Zand/or logic stripes 124-1, . . . , 124-N, associated with the data pathof the plurality of shared I/O lines 155, may have a pitch equal to thatof the data path and that is a function of a pitch of digit lines to thearray of memory cells

For example, the sensing circuitry 150 described herein may be formed ona same pitch as a pair of complementary sense lines (e.g., digit lines).As an example, a pair of complementary memory cells may have a cell sizewith a 6F² pitch (e.g., 3F×2F), where F is a feature size. If the pitchof a pair of complementary sense lines for the complementary memorycells is 3F, then the sensing circuitry being on pitch indicates thesensing circuitry (e.g., a sense amplifier and/or a correspondingcompute component per respective pair of complementary sense lines) isformed to fit within the 3F pitch of the complementary sense lines.Likewise, the compute components 431-1, . . . , 431-Z of the logicstripes 124-1, . . . , 124-N, associated with the data path of theplurality of shared I/O lines 155, have a pitch that is a function ofthe 3F pitch of the complementary sense lines. For example, the computecomponents 431-1, . . . , 431-Z of logic stripes 124-1, . . . , 124-Nmay have a pitch that is an integer multiple of the 3F pitch of digitlines to the array of memory cells, which also may correspond to a pitchof the plurality of shared I/O lines 155.

By contrast, the circuitry of the processing resource(s) (e.g., acompute engine, such as an ALU) of various prior systems may not conformto pitch rules associated with a memory array. For example, the memorycells of a memory array may have a 4F² or 6F² cell size. As such, thedevices (e.g., logic gates) associated with ALU circuitry of previoussystems may not be capable of being formed on pitch with the memorycells (e.g., on a same pitch as the sense lines), which may affect chipsize and/or memory density, for example. In the context of somecomputing systems and subsystems (e.g., a central processing unit(CPU)), data may be processed in a location that is not on pitch and/oron chip with memory (e.g., memory cells in the array), as describedherein. For example, the data may be processed by a processing resourceassociated with a host, for instance, rather than on pitch with thememory.

As such, in a number of embodiments, circuitry external to array 130 andsensing circuitry 150 is not needed to perform compute functions as thesensing circuitry 150 may perform the appropriate operations to performsuch compute functions or may perform such operations in a data path ofa plurality of shared I/O lines local to the array without the use of anexternal processing resource. Therefore, the sensing circuitry 150and/or the plurality of compute components 431-1, . . . , 431-Z and/orlogic stripes 124-1, . . . , 124-N in a compute unit in a data path ofthe plurality of shared I/O lines 155 may be used to complement or toreplace, at least to some extent, such an external processing resource(or at least the bandwidth consumption of such an external processingresource). In some embodiments, the sensing circuitry 150 and/or theplurality of compute components 431-1, . . . , 431-Z and/or logicstripes 124-1, . . . , 124-N in a compute unit in a data path of theplurality of shared I/O lines 155 may be used to perform operations(e.g., to execute instructions) in addition to operations performed byan external processing resource (e.g., host 110). For instance, host 110and/or sensing circuitry 150 may be limited to performing only certainoperations and/or a certain number of operations.

Operations described herein may include operations associated with a PIMcapable device. PIM capable device operations may use bit vector basedoperations. As used herein, the term “bit vector” is intended to mean anumber of bits on a bit vector memory device (e.g., a PIM device) storedphysically contiguously or non-contiguously in a row of an array ofmemory cells. Thus, as used herein a “bit vector operation” is intendedto mean an operation that is performed on a bit vector that is acontiguous or non-contiguous portion of virtual address space (e.g.,used by a PIM device). For example, a row of virtual address space inthe PIM device may have a bit length of 16K bits (e.g., corresponding to16K complementary pairs of memory cells in a DRAM configuration).Sensing circuitry 150, as described herein, for such a 16K bit row mayinclude a corresponding 16K sense amplifiers 206 and/or processingelements (e.g., compute components 231) formed on pitch with the senselines selectably coupled to corresponding memory cells in the 16 bitrow. A compute component in the sensing circuitry and/or logic stripe ofthe PIM device may operate as a one bit processing element (PE) on asingle bit of the bit vector of the row or subrow of memory cells sensedby the sensing circuitry 150 (e.g., sensed by and/or stored by a senseamplifier, as described herein). Similarly, the plurality of computecomponents 431-1, . . . , 431-Z of logic stripes 124-1, . . . , 124-N ina compute unit in a data path of the plurality of shared I/O lines 155may each operate as a one bit PE on a single bit of the bit vector ofthe row and/or subrow of memory cells sensed in an array.

Enabling an I/O line may include enabling (e.g., turning on, activating)a transistor having a gate coupled to a decode signal (e.g., a columndecode signal) and a source/drain coupled to the I/O line. However,embodiments are not limited to not enabling an I/O line. For instance,in a number of embodiments, the sensing circuitry (e.g., 150) may beused to perform operations without enabling column decode lines of thearray.

However, the plurality of shared I/O lines 155 may be enabled in orderto load data values to the plurality of compute components 431-1, . . ., 431-Z and/or logic stripes 124-1, . . . , 124-N in a compute unit in adata path of the plurality of shared I/O lines 155 where computeoperations may be controlled much faster. For example, in the pluralityof compute components 431-1, . . . , 431-Z and/or logic stripes 124-1, .. . , 124-N in the compute unit, the compute operation may be performedat speeds of 2 ns. This enhancement of speed may be attributed to nothaving to move the data values back into the rows and/or subrows withthe associated time used in firing the rows in the array (e.g., 60 ns).

FIG. 1B is another block diagram of an apparatus in the form of acomputing system including a memory device having a I/O line 155 in adata path local to bank sections 123-1, 123-2, . . . , 123-N of an arrayin accordance with a number of embodiments of the present disclosure.For example, bank 121-1 may represent an example bank of a memory device120. As shown in FIG. 1B, a bank 121-1 may include a plurality of mainmemory columns (shown horizontally as X) (e.g., 16,384 columns in anexample DRAM bank). Additionally, the bank 121-1 may be divided up intobank sections (e.g., quadrants of 32 subarrays), 123-1, 123-2, . . . ,123-N. Each bank section may be associated with a plurality of computecomponents 431-1, . . . , 431-Z in logic stripes 124-1, . . . , 124-N ina compute unit in a data path of the plurality of shared I/O lines 155.Each of the of the bank sections 123-1, . . . , 123-N may include aplurality of rows (shown vertically as Y) (e.g., each section may be aquadrant that includes 32 subarrays that each may include 512 rows and16 subrows per row in an example DRAM bank). Example embodiments are notlimited to the example horizontal and/or vertical orientation of columnsand rows and subrows described here or the example numbers thereof.

Each bank section, in some embodiments, may have a plurality of computecomponents 431-1, . . . , 431-Z and logic stripes 124-1, . . . , 124-Nin a compute unit in a data path of the plurality of shared I/O lines155 associated therewith. The bank 121-1 may include a controller 140and/or a number of controllers associated with each bank section and/orsubarray to direct movement (e.g., via movement component 171) and/oroperations on data values loaded to the plurality of compute components431-1, . . . , 431-Z in logic stripes 124-1, . . . , 124-N in a computeunit in a data path of the plurality of shared I/O lines 155.

FIG. 2 is a schematic diagram illustrating circuitry of a memory device120, the circuitry including a sense amplifier 206 and a computecomponent 231, which each may, in various embodiments, be included insensing circuitry 250 and/or logic stripes 124, in accordance with anumber of embodiments of the present disclosure. The sensing circuitry250 may correspond to sensing circuitry 150 shown in FIG. 1A.

As shown in the example embodiment of FIG. 2, a memory cell may includea storage element (e.g., capacitor) and an access device (e.g.,transistor). For example, a first memory cell may include transistor202-1 and capacitor 203-1, and a second memory cell may includetransistor 202-2 and capacitor 203-2, etc. In this embodiment, thememory array 230 is a DRAM array of 1T1B (one transistor one capacitor)memory cells, although other embodiments of configurations may be used(e.g., 2T2C with two transistors and two capacitors per memory cell). Ina number of embodiments, the memory cells may be destructive read memorycells (e.g., reading the data stored by the cell destroys the data suchthat the data originally stored by the cell is refreshed after beingread).

The cells of the memory array 230 may be arranged in rows coupled byaccess (word) lines 204-X (Row X), 204-Y (Row Y), etc., and columnscoupled by pairs of complementary sense lines (e.g., digit linesDIGIT(D) and DIGIT(D)_ shown in FIG. 2). The individual sense linescorresponding to each pair of complementary sense lines may also bereferred to as digit lines 205-1 for DIGIT (D) and 205-2 for DIGIT (D)_,respectively, or corresponding reference numbers in FIG. 3. Althoughonly one pair of complementary digit lines are shown in FIG. 2,embodiments of the present disclosure are not so limited, and an arrayof memory cells may include additional columns of memory cells and digitlines (e.g., 4,096, 8,192, 16,384, etc.).

Although rows and columns are illustrated as orthogonally oriented in aplane, embodiments are not so limited. For example, the rows and columnsmay be oriented relative to each other in any feasible three-dimensionalconfiguration. For example, the rows and columns may be oriented at anyangle relative to each other, may be oriented in a substantiallyhorizontal plane or a substantially vertical plane, and/or may beoriented in a folded topology, among other possible three-dimensionalconfigurations.

Memory cells may be coupled to different digit lines and word lines. Forexample, a first source/drain region of a transistor 202-1 may becoupled to digit line 205-1 (D), a second source/drain region oftransistor 202-1 may be coupled to capacitor 203-1, and a gate of atransistor 202-1 may be coupled to word line 204-Y. A first source/drainregion of a transistor 202-2 may be coupled to digit line 205-2 (D)_, asecond source/drain region of transistor 202-2 may be coupled tocapacitor 203-2, and a gate of a transistor 202-2 may be coupled to wordline 204-X. A cell plate, as shown in FIG. 2, may be coupled to each ofcapacitors 203-1 and 203-2. The cell plate may be a common node to whicha reference voltage (e.g., ground) may be applied in various memoryarray configurations.

The memory array 230 is configured to couple to sensing circuitry 250 inaccordance with a number of embodiments of the present disclosure. Inthis embodiment, the sensing circuitry 250 comprises a sense amplifier206 and a compute component 231 corresponding to respective columns ofmemory cells (e.g., coupled to respective pairs of complementary digitlines). However, in some embodiments, the sensing circuitry 250 used forin data path compute operations performed by compute components of logicstripes may not include compute components in the sensing circuitry 250.The sense amplifier 206 may be coupled to the pair of complementarydigit lines 205-1 and 205-2. If present, the compute component 231 maybe coupled to the sense amplifier 206 via pass gates 207-1 and 207-2.The gates of the pass gates 207-1 and 207-2 may be coupled to operationselection logic 213.

The operation selection logic 213 may be configured to include pass gatelogic for controlling pass gates that couple the pair of complementarydigit lines un-transposed between the sense amplifier 206 and thecompute component 231 and swap gate logic for controlling swap gatesthat couple the pair of complementary digit lines transposed between thesense amplifier 206 and the compute component 231. The operationselection logic 213 may also be coupled to the pair of complementarydigit lines 205-1 and 205-2. The operation selection logic 213 may beconfigured to control continuity of pass gates 207-1 and 207-2 based ona selected operation.

The sense amplifier 206 may be operated to determine a data value (e.g.,logic state) stored by a selected memory cell. The sense amplifier 206may comprise a cross coupled latch, which may be referred to herein as aprimary latch. In the example illustrated in FIG. 2, the circuitrycorresponding to sense amplifier 206 comprises a latch 215 includingfour transistors coupled to a pair of complementary digit lines D 205-1and (D)_(—) 205-2. However, embodiments are not limited to this example.The latch 215 may be a cross coupled latch (e.g., gates of a pair oftransistors) such as n-channel transistors (e.g., NMOS transistors)227-1 and 227-2 are cross coupled with the gates of another pair oftransistors, such as p-channel transistors (e.g., PMOS transistors)229-1 and 229-2). The cross coupled latch 215 comprising transistors227-1, 227-2, 229-1, and 229-2 may be referred to as the primary latch.

In operation, when a memory cell is being sensed (e.g., read), thevoltage on one of the digit lines 205-1 (D) or 205-2 (D)_(—) will beslightly greater than the voltage on the other one of digit lines 205-1(D) or 205-2 (D)_. An ACT signal and an RNL* signal may be driven low toenable (e.g., fire) the sense amplifier 206. The digit lines 205-1 (D)or 205-2 (D)_(—) having the lower voltage will turn on one of the PMOStransistor 229-1 or 229-2 to a greater extent than the other of PMOStransistor 229-1 or 229-2, thereby driving high the digit line 205-1 (D)or 205-2 (D)_(—) having the higher voltage to a greater extent than theother digit line 205-1 (D) or 205-2 (D)_(—) is driven high.

Similarly, the digit line 205-1 (D) or 205-2 (D)_(—) having the highervoltage will turn on one of the NMOS transistor 227-1 or 227-2 to agreater extent than the other of the NMOS transistor 227-1 or 227-2,thereby driving low the digit line 205-1 (D) or 205-2 (D)_(—) having thelower voltage to a greater extent than the other digit line 205-1 (D) or205-2 (D)_(—) is driven low. As a result, after a short delay, the digitline 205-1 (D) or 205-2 (D)_(—) having the slightly greater voltage isdriven to the voltage of the supply voltage Vcc through a sourcetransistor, and the other digit line 205-1 (D) or 205-2 (D)_(—) isdriven to the voltage of the reference voltage (e.g., ground) through asink transistor. Therefore, the cross coupled NMOS transistors 227-1 and227-2 and PMOS transistors 229-1 and 229-2 serve as a sense amplifierpair, which amplify the differential voltage on the digit lines 205-1(D) and 205-2 (D)_(—) and operate to latch a data value sensed from theselected memory cell.

Embodiments are not limited to the sense amplifier 206 configurationillustrated in FIG. 2. As an example, the sense amplifier 206 may be acurrent-mode sense amplifier and a single-ended sense amplifier (e.g.,sense amplifier coupled to one digit line). Also, embodiments of thepresent disclosure are not limited to a folded digit line architecturesuch as that shown in FIG. 2.

The sense amplifier 206 can, in conjunction with the compute component231, be operated to perform various operations using data from an arrayas input. In a number of embodiments, the result of an operation may bestored back to the array without transferring the data via a digit lineaddress access (e.g., without firing a column decode signal such thatdata is transferred to circuitry external from the array and sensingcircuitry via local I/O lines). As such, a number of embodiments of thepresent disclosure may enable performing operations and computefunctions associated therewith using less power than various previousapproaches. Additionally, since a number of embodiments eliminate theneed to transfer data across local and global I/O lines in order toperform compute functions (e.g., between memory and discrete processor),a number of embodiments may enable an increased (e.g., faster)processing capability as compared to previous approaches.

The sense amplifier 206 may further include equilibration circuitry 214,which may be configured to equilibrate the digit lines 205-1 (D) and205-2 (D)_. In this example, the equilibration circuitry 214 comprises atransistor 224 coupled between digit lines 205-1 (D) and 205-2 (D)_. Theequilibration circuitry 214 also comprises transistors 225-1 and 225-2each having a first source/drain region coupled to an equilibrationvoltage (e.g., VDD/2), where VDD is a supply voltage associated with thearray. A second source/drain region of transistor 225-1 may be coupleddigit line 205-1 (D), and a second source/drain region of transistor225-2 may be coupled digit line 205-2 (D)_. Gates of transistors 224,225-1, and 225-2 may be coupled together, and to an equilibration (EQ)control signal line 226. As such, activating EQ enables the transistors224, 225-1, and 225-2, which effectively shorts digit lines 205-1 (D)and 205-2 (D)_(—) together and to the equilibration voltage (e.g.,Vcc/2).

Although FIG. 2 shows sense amplifier 206 comprising the equilibrationcircuitry 214, embodiments are not so limited, and the equilibrationcircuitry 214 may be implemented discretely from the sense amplifier206, implemented in a different configuration than that shown in FIG. 2,or not implemented at all.

As described further below, in a number of embodiments, the sensingcircuitry 250 (e.g., sense amplifier 206 and compute component 231) maybe operated to perform a selected operation and initially store theresult in one of the sense amplifier 206 or the compute component 231without transferring data from the sensing circuitry via a local orglobal I/O line (e.g., without performing a sense line address accessvia activation of a column decode signal, for instance).

However, further to embodiments described herein, sensing circuitry 250having sense amplifiers 206, which in some embodiments may also includecompute components 231 as shown in FIG. 2, may also couple the memorycells from a multiplexed column of memory cells in an array to thecompute components 431-1, . . . , 431-Z and/or logic stripes 424-1, . .. , 424-N in a compute unit 460 in the data path of the plurality ofshared I/O lines 455 local to the array as discussed in connection withFIG. 4. In this manner, the compute components 431-1, . . . , 431-Zand/or logic stripes 424-1, . . . , 424-N may be indirectly coupled tothe memory cells of a column through the plurality of shared I/O lines455 via select logic (discussed in connection with FIGS. 3-7).

Performance of operations (e.g., Boolean logical operations involvingdata values) is fundamental and commonly used. Boolean logicaloperations are used in many higher level operations. Consequently, speedand/or power efficiencies that may be realized with improved operations,may translate into speed and/or power efficiencies of higher orderfunctionalities.

As shown in FIG. 2, the compute component 231 may also comprise a latch,which may be referred to herein as a secondary latch 264. The secondarylatch 264 may be configured and operated in a manner similar to thatdescribed above with respect to the primary latch 215, with theexception that the pair of cross coupled p-channel transistors (e.g.,PMOS transistors) included in the secondary latch may have theirrespective sources coupled to a supply voltage (e.g., VDD), and the pairof cross coupled n-channel transistors (e.g., NMOS transistors) of thesecondary latch may have their respective sources selectively coupled toa reference voltage (e.g., ground), such that the secondary latch iscontinuously enabled. The configuration of the compute component 231 isnot limited to that shown in FIG. 2, and various other embodiments arefeasible, for example, for use as the compute components 431-1, . . . ,431-Z described in connection with logic stripes 424-1, . . . , 424-N ofFIG. 4.

As described herein, a memory device (e.g., 120 in FIG. 1A) may beconfigured to couple to a host (e.g., 110) via a data bus (e.g., 156)and a control bus (e.g., 154). A bank 121 in the memory device 120 mayinclude a plurality of bank sections (123-1, . . . , 123-N in FIG. 1B)of memory cells. The bank 121 may include sensing circuitry (e.g., 150in FIG. 1A and corresponding reference numbers in FIGS. 2 and 3) coupledto the plurality of arrays via a plurality of columns (FIG. 1B) of thememory cells. The sensing circuitry may include a sense amplifier and/ora compute component (e.g., 206 and 231, respectively, in FIG. 2) coupledto each of the columns.

Each bank section 123 may be associated with a plurality of logicstripes (e.g., 124-0, 124-1, . . . , 124-N-1 in FIG. 1B) in a computeunit in a data path of a plurality of shared I/O lines (155 in FIG. 1B)local to array 230. A controller (e.g., 140 in FIGS. 1A and 1B) coupledto the bank may be configured to direct, as described herein, movementof data values to a compute component 431 (FIG. 4) in a logic stripe 424(FIG. 4) in a compute unit 360/460 (FIGS. 3 and 4) in a data path of ashared I/O line 355/455 (FIGS. 3 and 4) local to the array 230.

The memory device may include a logic stripe (e.g., 124 in FIG. 1B and424 in FIG. 4) having a plurality of compute components (e.g., 431-1, .. . , 431-Z in FIG. 4) that each may correspond to a number of theplurality of columns (FIG. 1B) of the memory cells in a subrow (e.g.,428-1, . . . , 428-16 in FIG. 4). As discussed further in connectionwith FIG. 3, the number of sense amplifiers 206 and/or computecomponents 231 in sensing circuitry 250 may be selectably coupled (e.g.,multiplexed via column select circuitry 358-1 and 358-2 in FIG. 3) to aplurality of shared I/O lines 355 (FIG. 3). The column select circuitrymay be configured to selectably sense data in a particular column ofmemory cells of an array by being selectably coupled to a plurality of(e.g., four, eight, and sixteen, among other possibilities) senseamplifiers and/or compute components.

In some embodiments, a number of a plurality of logic stripes (e.g.,124-1, . . . , 124-N in FIG. 1B) in a bank may correspond to a number ofbank sections 123-1, . . . , 123-N in FIG. 1B (e.g., a quadrant having aplurality of subarrays) in the bank. Alternatively or in addition, thenumber of the plurality of logic stripes in a bank may correspond to anumber of a plurality of subrows in a row of a DRAM array. A logicstripe may include a plurality of compute components 431-1, . . . ,431-Z (FIG. 4) in a data path of a shared I/O local 455 (FIG. 4) to thearray 230 that may be configured and/or operate like the computecomponents 231 shown in FIG. 2. As will be shown in FIG. 3, data valuessensed from a row or subrow of the array may be moved in parallel bycolumn select logic via a plurality of shared I/O lines 355 (FIG. 3) toa plurality of compute components 431 (FIG. 4) in a compute unit 360/460(FIGS. 3 and 4) of a data path of the plurality of shared I/O lines355/455 (FIGS. 3 and 4). In some embodiments, the amount of data maycorrespond to a 1K bit width of the plurality of shared I/O lines, whichalso may correspond the number of memory cells and/or data values of asubrow.

In various embodiments, connection circuitry 232-1 may, for example, becoupled at 217-1 and connection circuitry 232-2 may be coupled at 217-1to a primary latch 215 (e.g., sense amplifier 206 serving as a latchassociated with a compute component 231 in a logic stripe) for movementof sensed, stored, and/or data values of a logic stripe on which anoperation has been performed. The data values may be moved to a selectedlatch and/or compute component 231 in another logic stripe, as describedherein, directly (e.g., as a bit serial link) via the connectioncircuitry 232-1 and 232-2 (e.g., without movement via a shared I/Oline).

Although FIG. 2 shows connection circuitry 232-1 and 232-2 to be coupledat 217-1 and 217-2, respectively, of the primary latch 215, embodimentsare not so limited. For example, connection circuitry 232-1 and 232-2may, for example, be coupled to the secondary latch 264 (e.g., computecomponent 231) for movement of the data values to a selected latchand/or compute component 231 in another logic stripe via the connectioncircuitry 232-1 and 232-2. For example, such connection circuitry 232-1and 232-2 may enable (e.g., as directed by controller 140) a cascade ofdata values (bits) from latches and/or compute components in a firstlogic stripe to corresponding latches and/or compute components in asecond logic stripe (e.g., an adjacent logic stripe) for performance ofa systolic sequence of operations in a plurality of logic stripes (e.g.,as described in connection with FIG. 9C).

As described herein, the array of memory cells may include animplementation of DRAM memory cells where the controller is configured,in response to a command, to move (e.g., copy, transfer, and/ortransport) data from the source location to the destination location viaa shared I/O line. In various embodiments, the source location may be ina first bank and the destination location may be in a compute unit 360(FIG. 3) in a data path of the shared I/O lines 355 (FIG. 3) local tothe array 230.

As described in FIG. 3, the apparatus may be configured to move (e.g.,copy, transfer, and/or transport) data from a source location, includinga particular row (e.g., 319 in FIG. 3) and column address associatedwith a first number of sense amplifiers and/or compute components to ashared I/O line (e.g., 355 in FIG. 3). In addition, the apparatus may beconfigured to move the data to a destination location, including aparticular logic stripe 424 (FIG. 4) associated with a compute unit 360(FIG. 3) in a data path of the shared I/0 line 355 (FIG. 3). As thereader will appreciate, each shared I/O line 355 (FIG. 3) may be asingle line or may include a pair of complementary shared I/O lines(e.g., shared I/O line and shared I/O line* in FIG. 3). In someembodiments, 2K shared I/O lines (e.g., complementary pairs of sharedI/O lines) may be configured as a 2K bit wide shared I/O line. In someembodiments, 1K shared I/O lines (e.g., complementary pairs of sharedI/O lines) may be configured as a 1K bit wide shared I/O line.

FIG. 3 is a schematic diagram illustrating circuitry for a plurality ofshared I/O lines in a data path of an array in accordance with a numberof embodiments of the present disclosure. FIG. 3 shows eight senseamplifiers (e.g., sense amplifiers 0, 1, . . . , 7 shown at 306-0,306-1, . . . , 306-7, respectively) each coupled to a respective pair ofcomplementary shared I/O lines 355 (e.g., shared I/O line and shared I/Oline*). FIG. 3 also shows eight compute components (e.g., computecomponents 0, 1, . . . , 7 shown at 331-0, 331-1, . . . , 331-7) eachcoupled to a respective sense amplifier (e.g., as shown for senseamplifier 0 at 306-0) via respective pass gates 307-1 and 307-2 anddigit lines 305-1 and 305-2. The pass gates may be connected as shown inFIG. 2 and may be controlled by an operation selection signal, Pass. Forexample, an output of the selection logic may be coupled to the gates ofthe pass gates 307-1 and 307-2 and digit lines 305-1 and 305-2. In someembodiments, corresponding pairs of the sense amplifiers and computecomponents may contribute to formation of the sensing circuitryindicated at 350-0, 350-1, . . . , 350-7.

Data values present on the pair of complementary digit lines 305-1 and305-2 may be loaded into the sense amplifier 306-0 as described inconnection with FIG. 2. In some embodiments, when the pass gates 307-1and 307-2 are enabled, data values on the pair of complementary digitlines 305-1 and 305-2 may be passed from the sense amplifiers to thecompute component (e.g., 306-0 to 331-0). The data values on the pair ofcomplementary digit lines 305-1 and 305-2 may be the data value storedby the sense amplifier 306-0 when the sense amplifier is fired.

The sense amplifiers 306-0, 306-1, . . . , 306-7 in FIG. 3 may eachcorrespond to sense amplifier 206 shown in FIG. 2. The computecomponents 331-0, 331-1, . . . , 331-7 shown in FIG. 3 may eachcorrespond to compute component 231 shown in FIG. 2. An individual senseamplifier, or a combination of one sense amplifier with one computecomponent, may contribute to the sensing circuitry (e.g., 350-0, 350-1,. . . , 350-7) of a portion of a DRAM memory subarray 325 coupled to ashared I/O line 355 shared by a number of logic stripes of compute unit360 in a data path of the shared I/O lines 355.

The configurations of embodiments illustrated in FIG. 3 are shown forpurposes of clarity and are not so limited. For instance, theconfiguration illustrated in FIG. 3 for the sense amplifiers 306-0,306-1, . . . , 306-7 in combination with the compute components 331-0,331-1, . . . , 331-7 and the shared I/O line 355 is not limited to halfthe combination of the sense amplifiers 306-0, 306-1, . . . , 306-7and/or compute components 331-0, 331-1, . . . , 331-7 of the sensingcircuitry being formed above the columns 322 of memory cells (not shown)and half being formed below the columns 322 of memory cells. Nor are thenumber of such combinations of the sense amplifiers and/or computecomponents forming the sensing circuitry configured to couple to ashared I/O line limited to eight. For example, the number of senseamplifiers and/or compute components forming the sensing circuitryconfigured to couple to a shared I/O line may be 16 when the number ofsubrows per row and/or the number of logic stripes is 16. In addition,the configuration of the shared I/O line 355 is not limited to beingsplit into two for separately coupling each of the two sets ofcomplementary digit lines 305-1 and 305-2, nor is the positioning of theshared I/O line 355 limited to being in the middle of the combination ofthe sense amplifiers and/or compute components forming the sensingcircuitry (e.g., rather than being at either end of the combination ofthe sense amplifiers and the compute components).

The circuitry illustrated in FIG. 3 also shows column select circuitry358-1 and 358-2 that is configured to implement data movement operationsby multiplexing with respect to particular columns 322 of a subarray325, the complementary digit lines 305-1 and 305-2 associated therewith,and the shared I/O line 355 (e.g., as directed by the controller 140shown in FIGS. 1A and 1B). For example, column select circuitry 358-1has select lines 0, 2, 4, and 6 that are configured to couple withcorresponding columns, such as column 0 (332-0), column 2, column 4, andcolumn 6. Column select circuitry 358-2 has select lines 1, 3, 5, and 7that are configured to couple with corresponding columns, such as column1, column 3, column 5, and column 7. The column select circuitry 358described in connection with FIG. 3 can, in various embodiments,represent at least a portion of the functionality embodied by andcontained in multiplexers (e.g., an 8 way multiplexer, a 16 waymultiplexer, etc.).

Controller 140 may be coupled to column select circuitry 358 to controlselect lines (e.g., select line 0) to access data values stored by thesense amplifiers, compute components, and/or present on the pair ofcomplementary digit lines (e.g., 305-1 and 305-2 when selectiontransistors 359-1 and 359-2 are activated via signals from select line0). Activating the selection transistors 359-1 and 359-2 (e.g., asdirected by the controller 140) enables coupling of sense amplifier306-0, compute component 331-0, and/or complementary digit lines 305-1and 305-2 of column 0 (322-0) to move data values on digit line 0 anddigit line 0 * to shared I/O line 355. For example, the moved datavalues may be data values from a particular row 319 stored (cached) insense amplifier 306-0 and/or compute component 331-0. Data values fromeach of columns 0 through 7 may similarly be selected by controller 140activating the appropriate selection transistors.

Moreover, enabling (e.g., activating) the selection transistors (e.g.,selection transistors 359-1 and 359-2) may enable a particular senseamplifier and/or compute component (e.g., 306-0 and/or 331-0,respectively) to be coupled with a shared I/O line 355 such that datavalues stored by an amplifier and/or compute component may be moved to(e.g., placed on and/or transferred to) the shared I/O line 355. In someembodiments, one column at a time is selected (e.g., column 322-0) to becoupled to a particular shared I/O line 355 to move (e.g., copy,transfer, and/or transport) the stored data values. In the exampleconfiguration of FIG. 3, the shared I/O line 355 is illustrated as ashared, differential I/O line pair (e.g., shared I/O line and shared I/Oline*). Hence, selection of column 0 (322-0) could yield two data values(e.g., two bits with values of 0 and/or 1) from a subrow of a row (e.g.,row 319) and/or as stored by the sense amplifier and/or computecomponent associated with complementary digit lines 305-1 and 305-2.These data values could be input in parallel to each shared,differential I/O pair (e.g., shared I/O and shared I/O*) of the shareddifferential I/O line 355.

FIG. 4 is a block diagram illustrating a bank section 423 of an array130 (FIG. 1A) coupled to a compute unit 460, having a plurality of logicstripes, 424-1, . . . , 424-Z, by a plurality of shared I/O lines 455 ina data path local to the array 130 in accordance with a number ofembodiments of the present disclosure. In the embodiment of FIG. 4, abank section 423 (e.g., having a plurality of bank quadrants) is shownhaving a plurality of subarrays 425-1, . . . , 425-32 per quadrant. InFIG. 4, 32 subarrays are illustrated in bank quadrant 1. However,embodiments are not limited to this example. This example shows a banksection 423 as having 16K columns, which may be multiplexed (e.g., viathe column select circuitry shown at 358-1 and 358-2 and described inconnection with FIG. 3) by 16 subrows 428-1, . . . , 428-16 per row tothe shared I/O lines 455. In some embodiments, every sixteenth column,and a coupled memory cell, may provide a data value that may be moved asa subrow to the compute unit 460 as a group of 1K bits in parallel.Alternatively or in addition, a contiguous 1K columns, and coupledmemory cells, may provide 1K data values that may be moved as a subrowto the compute unit 460 as a group of 1K bits in parallel. In eitherembodiment, among other potential embodiments, the groups of 1K bits maybe moved sequentially in 16 cycles through the shared I/O lines 455 to1K designated compute components 431-1, . . . , 431-Z of 16 designatedlogic stripes 424-1, . . . , 424-N.

For example, a bit from a first sense amplifier and/or memory cell in asequence of the first subrow 428-1 may be directed (e.g., by thecontroller 140) for storage by a first compute component 431-1, or anassociated latch, in the sequence of compute components in the firstlogic stripe 424-1. A bit from a second sense amplifier and/or memorycell in the sequence of the first subrow 428-1 may be directed forstorage by a second compute component 431-2, or an associated latch, inthe sequence of compute components in the first logic stripe 424-1.Further, a bit from a first sense amplifier and/or memory cell in asequence of the second subrow 428-2 may be directed for storage by afirst compute component 431-1, or an associated latch, in the sequenceof compute components in the second logic stripe 424-2. A bit from asecond sense amplifier and/or memory cell in the sequence of the secondsubrow 428-2 may be directed for storage by a second compute component,or an associated latch, in the sequence of compute components in thesecond logic stripe 424-1. Bits corresponding to each sense amplifierand/or memory cell in the sequence of subrows 428-2 428-1, . . . ,428-16 per row may similarly be designated for storage by acorresponding compute component, or an associated latch, in the sequencein the sequence of logic stripes 424-1, . . . , 424-N (e.g., data valuesfrom subrow 428-1 are moved to logic stripe 424-1, data values fromsubrow 428-2 are moved to logic stripe 424-2, etc.). Movement may bedirected to a designated logic stripe via the shared I/O lines 455,which may provide a 1K bit wide data path to the compute unit 460.

In the example of FIG. 4, each logic stripe 424-1, . . . , 424-N mayhave a plurality of compute components 431-1, . . . , 431-Z as computecomponents 231 have been described herein in connection with the sensingcircuitry 250 of FIG. 2. In some embodiments, each of the plurality oflogic stripes 424-1, . . . , 424-N may be configured to perform acompute function using the plurality of compute components 431-1, . . ., 431-Z. In some embodiments, each of the plurality of logic stripes424-1, . . . , 424-Z may perform a different logical operation using theplurality of compute components 431-1, . . . , 431-Z. For example, atleast one of the plurality of logic stripes 424-1, . . . , 424-Z may beconfigured to perform an AND operation and at least one of the pluralityof logic stripes 424-1, . . . , 424-Z may be configured to perform a NORoperation, among various combinations and/or sequences of logicaloperations.

In some embodiments, the controller 140 (FIG. 1A) associated with thebank section may execute microcode instructions to direct movement ofthe 1K data values in parallel from a corresponding 1K multiplexedcolumns in connection with a particular accessed subrow among theplurality of subarrays 425-1, . . . , 425-32 to a particular computecomponent 431-1, . . . , 431-Z of a particular logic stripe 424-1, . . ., 424-N in the compute unit 460.

In some embodiments, the shared I/O lines may be used to connect the 1Kdata values to a respective one of the plurality of compute components431-1, . . . , 431-Z in a respective one of the plurality of logicstripes 424-1, . . . , 424-N. By way of example and not by way oflimitation, 1K bits of the data values may be moved in parallel to aparticular logic stripe associated with each subrow. In variousembodiments, there may, for example, be a compute unit 460 associatedwith each of the 32 subarrays 425-1, . . . , 425-32 in each of 4quadrants of a bank section 423 or compute units may be shared betweenvarious combinations of the subarrays, quadrants, and/or bank sections.Data values loaded to the plurality of compute components 431-1, . . . ,431-Z in the logic stripes 424-1, . . . , 424-N of the compute unit 460may be operated on according to microcode instructions from thecontroller 140 (FIG. 1A) to perform operations (e.g., AND, OR, NOR, XOR,add, subtract, multiply, divide, etc.) on the data values as the samehave been described herein in connection with the sensing circuitry 250of FIG. 2.

As described herein, for example, once the 1K data values of a firstsubrow 428-1 are moved (e.g., loaded) to a first logic stripe 424-1 ofthe compute unit 460, compute operations may be initiated on such datavalues before and/or substantially simultaneously with data values froma second subrow 428-2 being moved to a second logic stripe 424-2 of thecompute unit 460. Such operations performed in the logic stripe of thecompute unit may be controlled much faster (e.g., at speeds ofapproximately 2 ns) according to microcode instructions executed by thecontroller 140 (FIG. 1A) without having to move the data values backinto the rows of the array 130 (FIG. 1A). For example, computeoperations may be performed using the compute unit 460 at a much fasterspeed as compared to an example time (e.g., approximately 60 ns) thatmay be required to fire and access rows in the array 130 (FIG. 1A). Asdescribed in connection with FIG. 2, connection circuitry 232-1 and232-2 may enable movement of sensed, stored, and/or data values of alogic stripe on which an operation has been performed between logicstripes without movement via a shared I/O line.

Accordingly, a memory device 120 may include, in various embodiments, aplurality of I/O lines shared as a data path for in data path computeoperations associated with an array 130 of memory cells. The pluralityof shared I/O lines may selectably couple a first subrow (e.g., 428-1)of a row of the array via the sensing circuitry (e.g., 350) to a firstcompute component (e.g., 431-1) in the data path to move a first datavalue from the first subrow to the first compute component. Theplurality of shared I/O lines may selectably couple a second subrow(e.g., 428-2) of the respective row via the sensing circuitry to asecond compute component (e.g., a compute component corresponding to theposition of the first compute component in the first logic stripe) inthe data path to move a second data value from the second subrow to thesecond compute component. For example, the first logic stripe (e.g.,424-1) may include the first compute component and a second logic stripe(e.g., 424-2) may include the second compute component. As describedherein, an operation may be performed on the first data value from thefirst subrow using the first compute component substantiallysimultaneously with movement of the second data value from the secondsubrow to the second compute component.

In various embodiments, the data path may further include the firstlogic stripe (e.g., 424-1) that may include a number of a plurality offirst compute components (e.g., 431-1, . . . , 431-Z) that correspondsto a number of a plurality of memory cells (not shown) of the firstsubrow (e.g., 428-1) and the second logic stripe (e.g., 424-2) that mayinclude a number of a plurality of second compute components thatcorresponds to a number of a plurality of memory cells of the secondsubrow (e.g., 428-2). A number of a plurality of logic stripes (e.g.,424-1, . . . , 424N) may correspond to a number of a plurality ofsubrows (e.g., 428-1, . . . , 428-16) of the respective row. A computeunit (e.g., 460) may include a plurality of logic stripes (e.g., 424-1,. . . , 424N) that may each include a plurality of compute components(e.g., 431-1, . . . , 431-Z), where each of the plurality of computecomponents may be associated with (e.g., selectably coupled to) at leastone of the plurality of shared I/O lines 455 local to the array. Anumber of the plurality of shared I/O lines may correspond to a numberof a plurality of memory cells of a subrow of the respective row (e.g.,an individual shared I/O line for every 8 or 16 memory cells and/orcolumns of the subrow or row, among other possible configurations). Alogic stripe (e.g., 424-1) may include a number of a plurality ofcompute components (e.g., 431-1, . . . , 431-Z) that corresponds to thenumber of the plurality of memory cells of the subrow coupled to arespective logic stripe.

FIG. 5 is a block diagram illustrating an example of a controller 540 ofa memory device 520 in accordance with a number of embodiments of thepresent disclosure. In some implementations, the block diagram of FIG. 5provides greater detail of a portion of one example of a PIM capabledevice such as memory device 120 in FIGS. 1A and 1B. In the example ofFIG. 5, a controller 540-1, . . . , 540-7 (referred to generally ascontroller 540) may be associated with each bank 521-1, . . . , 521-7(referred to generally as bank 521) to the PIM capable device 520. Eightbanks are shown in the example of FIG. 5. However, embodiments are notlimited to this example number. Controller 540 may, for example,represent controller 140 shown in FIG. 1A. Each bank may include one ormore arrays of memory cells (not shown). For example, each bank mayinclude one or more arrays such as array 130 in FIG. 1A and may includedecoders, other circuitry, and/or registers, as shown in FIG. 1A. In theexample memory device 520 shown in FIG. 5, controllers 540-1, . . . ,540-7 are shown as having control logic 531-1, . . . , 531-7, sequencers532-1, . . . , 532-7, and timing circuitry 533-1, . . . , 533-7 as partof a controller 540 on one or more memory banks 521 of a memory device520. The PIM capable device 520 may represent part of memory device 120shown in FIG. 1A.

As shown in FIG. 5, the memory device 520 may include a high speedinterface (HSI) 541 to receive data, addresses, control signals, and/orcommands at the PIM capable device 520. In various embodiments, the HSI541 may be coupled to a bank arbiter 545 associated with the PIM capabledevice 520. The HSI 541 may be configured to receive commands and/ordata from a host (e.g., 110 in FIG. 1A). As shown in FIG. 5, the bankarbiter 545 may be coupled to the plurality of banks 521-1, . . . ,521-7.

The control logic 531-1, . . . , 531-7 in the example shown in FIG. 5may be in the form of a microcode engine responsible for fetching andexecuting machine instructions (e.g., microcode instructions) from anarray of memory cells (e.g., array 130 in FIG. 1A) that is part of eachbank 521-1, . . . , 521-7. The sequencers 532-1, . . . , 532-7 may alsobe in the form of microcode engines. Alternatively, the control logic531-1, . . . , 531-7 may be in the form of a very large instruction word(VLIW) type processing resource and the sequencers 532-1, . . . , 532-7,and the timing circuitry 533-1, . . . , 533-7 may be in the form ofstate machines and transistor circuitry.

The control logic 531-1, . . . , 531-7 may decode microcode instructionsinto function calls (e.g., microcode function calls (uCODE)) implementedby the sequencers 532-1, . . . , 532-7. FIG. 6 illustrates anotherembodiment of controller 540, shown as 642 in FIG. 6, which illustratesa more detailed portion of a sequencer according to embodiments of thepresent disclosure. The microcode function calls may be the operationsthat the sequencers 532-1, . . . , 532-7 receive and execute to causethe memory device 520 to perform particular logical operations using thesensing circuitry such as sensing circuitry 150 in FIG. 1A or using thecompute components 431-1, . . . , 431-Z and 631-1, . . . , 631-Z of thecompute units 460 and 660 shown in FIGS. 4 and 6, respectively. Thetiming circuitry 533-1, . . . , 533-7 may provide timing to coordinateperformance of the logical operations by the logic stripes 424-1, . . ., 424-N and 624-1, . . . , 624-N of the compute units 460 and 660 shownin FIGS. 4 and 6, respectively, and/or be responsible for providingconflict free access to the arrays, such as array 130 in FIG. 1A.

As described in connection with FIG. 1A, the controllers 540-1, . . . ,540-7 may be coupled to sensing circuitry 150, compute unit 460/660,and/or additional logic circuitry 170, including cache, buffers, senseamplifiers, extended row address (XRA) latches, and/or registers,associated with arrays of memory cells via control lines and data pathsshown in FIG. 5 as 555-1, 555-7. As such, sensing circuitry 150, computeunit 460/660, and logic 170 shown in FIGS. 1A, 4 and 6 may be associatedwith the arrays of memory cells 130 (e.g., using shared I/O lines shownat 555-1, . . . , 555-7 in FIG. 5 and/or other I/O circuitry). Thecontrollers 540-1, . . . , 540-7 may control regular DRAM operations forthe arrays such as a read, write, copy, and/or erase operations, etc.Additionally, however, microcode instructions retrieved and executed bythe control logic 531-1, . . . , 531-7 and the microcode function callsreceived and executed by the sequencers 532-1, . . . , 532-7 to causesensing circuitry 150 and/or compute unit 460/660 shown in FIGS. 1A, 4and 6 to perform additional logical operations such as addition,multiplication, or, as a more specific example, Boolean operations suchas an AND, OR, XOR, etc., which are different (e.g., more complex) thanregular DRAM read and write operations. Hence, in this example memorydevice 520, microcode instruction execution and/or logic operations maybe performed on the banks 521-1, . . . , 521-7 of a PIM capable device.

In various embodiments, the control logic 531-1, . . . , 531-7,sequencers 532-1, . . . , 532-7, and timing circuitry 533-1, . . . ,533-7 may operate to generate sequences of operation cycles for a DRAMarray and/or direct the performance of operations (e.g., logicaloperations) on the memory device 520 (e.g., on a bank 521-1, . . . ,521-7 including in a compute unit 460/660 in a data path of the sharedI/O lines 455-1, 455-7). In the PIM capable device example, eachsequence may be designed to perform operations, such as a Boolean logicoperations AND, OR, XOR, etc., which together achieve a specificfunction. For example, the sequences of operations may repetitivelyperform a logical operation for a one (1) bit add in order to calculatea multiple bit sum. In another example, instructions for the sequencesof operations may be executed to perform a number of alpha blendgraphics operations, among various other types of operations. Eachsequence of operations may be fed into a first in/first out (FIFO)buffer coupled to the timing circuitry 533-1, . . . , 533-7 to providetiming coordination with the sensing circuitry 150, compute unit460/660, and/or additional logic circuitry 170 associated with the arrayof memory cells 130 (e.g., DRAM arrays) shown in FIG. 1A.

In the example PIM capable memory device 520 shown in FIG. 5, the timingcircuitry 533-1, . . . , 533-7 may provide timing and may provideconflict free access to the arrays from four (4) FIFO queues and/or maycoordinate timing to operations in the compute unit 460/660. In thisexample, one FIFO queue may support array computation, one for microcode(e.g., Ucode) instruction fetch, one may be for control of the data pathrelated to the shared I/O lines, logic stripes, compute units,connection circuitry, etc., and one for DRAM I/O. Both the control logic531-1, . . . , 531-7 and the sequencers 532-1, . . . , 532-7 maygenerate status information, which may be routed back to the bankarbiter 545 via a FIFO interface. The bank arbiter 545 may aggregatethis status data and report it back to the host 110, for example, viaHSI 541

FIG. 6 is a block diagram illustrating another example of a portion of acontroller 642 of a memory device 520 (FIG. 5). The controller 642 is,among other functions, configured to control movement of data values toa compute unit 660, having a plurality of logic stripes 624-1, . . . ,624-N, using a shared I/O line 655 655 in a data path local to an array130 (FIG. 1A) in accordance with a number of embodiments of the presentdisclosure. In the example of FIG. 6, the portion of the controller 642is an example of a sequencer portion of a controller, such as sequencer532 in FIG. 5.

In the example embodiment of FIG. 6, the sequencer portion of thecontroller 642 may operate on three classes of microcode instruction:array operations, compute component operations, and control operations.As shown at 601, bit values may be provided as part of a subarray maskto identify a particular subarray in a quadrant of a bank section, asdescribed above. At 602-1 and 602-2, A and B address pointers,associated with a primary latch and secondary latch as described inconnection with the sensing circuitry 250 of FIG. 2 and shown in moredetail as 731 (A) and 706 (B) in FIG. 7, provide pointers to physicaladdresses for data values in an array 130 (FIG. 1A). At 603, bit valuesmay additionally provide an additional index into the array 130 (FIG.1A). As shown in the example of FIG. 6, the address pointers 602-1 and602-2 and index 603 are used to access particular row and sense lines(e.g., to row word lines and bit lines) of an array 130 (FIG. 1A).

The plurality of shared I/O lines 655 described herein may connect thearray 130 (FIG. 1A) to the compute unit 660 in a data path of the sharedI/O 655 local to the array. Instructions are provided from thecontroller 642 to the compute unit to load data values from the sharedI/O line 655 to a given compute component 631-1, . . . , 631-Z in agiven logic stripe 624-1, . . . , 624-N of the compute unit 660. A maskstripe 641 to the compute unit 660 may enable selecting a sense line andcompute component value for reads or writes.

At 604, a condition code from a wired OR logic configuration may providea bit value result of a wired OR operation with the compute unit 660. At611 bit values may provide a register address as a pointer to a secondregister source for compute component operation instructions. At 612,bit values may indicate a register index of a logic stripe 624-1, . . ., 624-N of the compute unit 660 together with the register addresspointer to a second register source for compute component operationinstructions 611.

FIG. 7 is a schematic diagram illustrating compute components 731 of alogic stripe (e.g., as shown at 124, 424, and 624 and described inconnection with FIGS. 1B, 4, and 6) in accordance with a number ofembodiments of the present disclosure. FIG. 7 also is a schematicdiagram illustrating compute unit 460/660 circuitry capable ofimplementing logical operations in accordance with a number ofembodiments of the present disclosure.

FIG. 7 shows a latch 706 directly coupled, in some embodiments, to apair of complementary shared I/O lines 755-1 and 755-2 (e.g., as shownand described in connection with shared I/O line 355 in FIG. 3) and/orlogical operation select logic 713, and a compute component 731 coupledto the latch 706 via pass gates 707-1 and 707-2. The latch 706 is shownin FIG. 7 to be directly coupled to the pair of complementary shared I/Olines 755-1 and 755-2 by way of illustration and not by way oflimitation. For example, a shared I/O line may be a single shared I/Oline 755 or may include the pair of complementary shared I/O lines shownin FIG. 7. Either embodiment of the shared I/O line may, in variousembodiments, be selectably and/or directly coupled to the latch 706 toload (e.g., store) a first data value from a first subrow of a first rowof an array and/or selectably and/or directly coupled to the computecomponent 731 to load (e.g., store) a second data value from a secondsubrow of a second row to enable performance of a logical operation bythe compute component 731 using the two stored data values.

In some embodiments, there may be a plurality of latches 706 associatedwith a compute component 731 such that the latches may, in variousembodiments, be selectably, directly, and/or indirectly coupled to theshared I/O line to load a data value to each of the latches, which maythen be selectably used (e.g., as directed by a controller) by anassociated compute component for performance of a plurality of logicaloperations (e.g., as determined by the number of latches squared).Hence, pass gates 707-1 and 707-2 may be used in various embodiments todirectly and/or indirectly couple the latches 706, compute components731, and/or logical operation select logic 713 to each other and/orindirectly connect the shared I/O line 755 to the latches 706, computecomponents 731, and/or logical operation select logic 713.

The latch 706 shown in FIG. 7 may function in a manner analogous to thesense amplifier 206 (e.g., primary latch) shown in and described inconnection with FIG. 2 as associated with sensing circuitry 250. Thecompute component 731 shown in FIG. 7 may function analogous to thecompute component 231 (e.g., secondary latch) shown in FIG. 2 asassociated with the sensing circuitry 250. The logical operationselection logic 713 shown in FIG. 7 may function analogous to thelogical operation selection logic 213 shown in FIG. 2 associated withthe sensing circuitry 250. The gates of the pass gates 707-1 and 707-2may be controlled by a logical operation selection logic 713 signal,(e.g., Pass). For example, an output of the logical operation selectionlogic 713 may be coupled to the gates of the pass gates 707-1 and 707-2.Further, the compute component 731 may comprise a loadable shiftregister configured to shift data values left and right.

According to the embodiment illustrated in FIG. 7, the computecomponents 731 may comprise respective stages (e.g., shift cells) of aloadable shift register configured to shift data values left and right.For example, as illustrated in FIG. 7, each compute component 731 (e.g.,stage) of the shift register comprises a pair of right-shift transistors781 and 786, a pair of left-shift transistors 789 and 790, and a pair ofinverters 787 and 788. The signals PHASE 1R, PHASE 2R, PHASE 1L, andPHASE 2L may be applied to respective control lines 782, 783, 791 and792 to enable/disable feedback on the latches of the correspondingcompute components 731 in association with performing logical operationsand/or shifting data in accordance with embodiments described herein.

The compute unit 460/660 circuitry shown in FIG. 7 shows operationselection logic 713 coupled to a number of logic selection control inputcontrol lines, including ISO, TF, TT, FT, and FF. Selection of a logicaloperation from a plurality of logical operations is determined from thecondition of logic selection control signals on the logic selectioncontrol input lines, as well as the data values present on the pair ofcomplementary shared I/O lines 755-1 and 755-2 when isolationtransistors 750-1 and 750-2 are enabled via an ISO control signal beingasserted.

According to various embodiments, the operation selection logic 713 mayinclude four logic selection transistors: logic selection transistor 762coupled between the gates of the swap transistors 742 and a TF signalcontrol line, logic selection transistor 752 coupled between the gatesof the pass gates 707-1 and 707-2 and a TT signal control line, logicselection transistor 754 coupled between the gates of the pass gates707-1 and 707-2 and a FT signal control line, and logic selectiontransistor 764 coupled between the gates of the swap transistors 742 anda FF signal control line. Gates of logic selection transistors 762 and752 are coupled to the true sense line through isolation transistor750-1 (having a gate coupled to an ISO signal control line). Gates oflogic selection transistors 764 and 754 are coupled to the complementarysense line through isolation transistor 750-2 (also having a gatecoupled to an ISO signal control line).

Data values present on the pair of complementary shared I/O lines 755-1and 755-2 may be loaded into the compute component 731 via the passgates 707-1 and 707-2. The compute component 731 may comprise a loadableshift register. When the pass gates 707-1 and 707-2 are OPEN, datavalues (“A”) on the pair of complementary shared I/O lines 755-1 and755-2 are passed to the compute component 731 and thereby loaded intothe loadable shift register. The data values on the pair ofcomplementary shared I/O lines 755-1 and 755-2 may be the data value(“B”) stored by the sense amplifier 706 when the sense amplifier isfired. In this example, the logical operation selection logic signal,Pass, is high to OPEN the pass gates 707-1 and 707-2.

The ISO, TF, TT, FT, and FF control signals may operate to select alogical function to implement based on the data value (“B”) in the senseamplifier 706 and the data value (“A”) in the compute component 731. Inparticular, the ISO, TF, TT, FT, and FF control signals are configuredto select the logical function to implement independent from the datavalue present on the pair of complementary shared I/O lines 755-1 and755-2 (although the result of the implemented logical operation may bedependent on the data value present on the pair of complementary sharedI/O lines 755-1 and 755-2. For example, the ISO, TF, TT, FT, and FFcontrol signals select the logical operation to implement directly sincethe data value present on the pair of complementary shared I/O lines755-1 and 755-2 is not passed through logic to operate the gates of thepass gates 707-1 and 707-2.

Additionally, FIG. 7 shows swap transistors 742 configured to swap theorientation of the pair of complementary shared I/O lines 755-1 and755-2 between the sense amplifier 706 and the compute component 731.When the swap transistors 742 are OPEN, data values on the pair ofcomplementary shared I/O lines 755-1 and 755-2 on the sense amplifier706 side of the swap transistors 742 are oppositely-coupled to the pairof complementary shared I/O lines 755-1 and 755-2 on the computecomponent 731 side of the swap transistors 742, and thereby loaded intothe loadable shift register of the compute component 731.

The logical operation selection logic 713 signal Pass may be activated(e.g., high) to OPEN the pass gates 707-1 and 707-2 (e.g., conducting)when the ISO control signal line is activated and either the TT controlsignal is activated (e.g., high) with data value on the true shared I/Oline is “1” or the FT control signal is activated (e.g., high) with thedata value on the complement shared I/O line is “1.”

The data value on the true shared I/O line being a “1” OPENs logicselection transistors 752 and 762. The data value on the complimentaryshared I/O line being a “1” OPENs logic selection transistors 754 and764. If the ISO control signal or either the respective TT/FT controlsignal or the data value on the corresponding shared I/O line (e.g.,shared I/O line to which the gate of the particular logic selectiontransistor is coupled) is not high, then the pass gates 707-1 and 707-2will not be OPENed by a particular logic selection transistor.

The logical operation selection logic signal Pass* may be activated(e.g., high) to OPEN the swap transistors 742 (e.g., conducting) whenthe ISO control signal line is activated and either the TF controlsignal is activated (e.g., high) with data value on the true shared I/Oline is “1,” or the FF control signal is activated (e.g., high) with thedata value on the complement shared I/O line is “1.” If either therespective control signal or the data value on the corresponding sharedI/O line (e.g., shared I/O line to which the gate of the particularlogic selection transistor is coupled) is not high, then the swaptransistors 742 will not be OPENed by a particular logic selectiontransistor.

The Pass* control signal is not necessarily complementary to the Passcontrol signal. It is possible for the Pass and Pass* control signals toboth be activated or both be deactivated at the same time. However,activation of both the Pass and Pass* control signals at the same timeshorts the pair of complementary shared I/O lines together, which may bea disruptive configuration to be avoided.

The compute unit 460/660 circuitry illustrated in FIG. 7 is configuredto select one of a plurality of logical operations to implement directlyfrom the four logic selection control signals (e.g., logical operationselection is not dependent on the data value present on the pair ofcomplementary shared I/O lines). Some combinations of the logicselection control signals may cause both the pass gates 707-1 and 707-2and swap transistors 742 to be OPEN at the same time, which shorts thepair of complementary shared I/O lines 755-1 and 755-2 together.According to a number of embodiments of the present disclosure, thelogical operations which may be implemented by the compute unit 460/660circuitry illustrated in FIG. 7 may be the logical operations summarizedin the logic tables shown in FIG. 8.

FIG. 8 is a logic table illustrating selectable logic operation resultsimplemented by compute components 731 and associated circuitry shown inFIG. 7 in accordance with a number of embodiments of the presentdisclosure. The selectable logic operation results may be implemented bycompute unit 460/660 circuitry in a data path of a plurality of sharedI/O lines 755-1 and 755-2 shown in FIG. 7. The four logic selectioncontrol signals (e.g., TF, TT, FT, and FF), in conjunction with aparticular data value present on the complementary shared I/O lines, maybe used to select one of plural logical operations to implementinvolving the starting data values (“A” and “B”) stored by the senseamplifier 706 (e.g., primary latch) and compute component 731 (e.g.,secondary latch) of the compute unit 460/660 circuitry. The four controlsignals, in conjunction with a particular data value present on thecomplementary shared I/O lines, control the continuity of the pass gates707-1 and 707-2 and swap transistors 742, which in turn affect the datavalue in the compute component 731 and/or sense amplifier 706before/after firing. The capability to selectably control continuity ofthe swap transistors 742 facilitates implementing logical operationsinvolving inverse data values (e.g., inverse operands and/or inverseresult), among others.

Logic Table 8-1 illustrated in FIG. 8 shows a starting data value storedby the compute component 731 (e.g., secondary latch) shown in column Aat 844, and a starting data value stored by the latch (e.g., senseamplifier 706 as a primary latch) shown in column B at 845. The other 3column headings in Logic Table 8-1 refer to the continuity of the passgates 707-1 and 707-2, and the swap transistors 742, which mayrespectively be controlled to be OPEN or CLOSED depending on the stateof the four logic selection control signals (e.g., TF, TT, FT, and FF),in conjunction with a particular data value present on the pair ofcomplementary shared I/O lines 755-1 and 755-2. The “Not Open” columncorresponds to the pass gates 707-1 and 707-2 and the swap transistors742 both being in a non-conducting condition, the “Open True”corresponds to the pass gates 707-1 and 707-2 being in a conductingcondition, and the “Open Invert” corresponds to the swap transistors 742being in a conducting condition. The configuration corresponding to thepass gates 707-1 and 707-2 and the swap transistors 742 both being in aconducting condition is not reflected in Logic Table 8-1 since thisresults in the sense lines being shorted together.

Via selective control of the continuity of the pass gates 707-1 and707-2 and the swap transistors 742, each of the three columns of theupper portion of Logic Table 8-1 may be combined with each of the threecolumns of the lower portion of Logic Table 8-1 to provide 3×3=9different result combinations, corresponding to nine different logicaloperations, as indicated by the various connecting paths shown at 875.The nine different selectable logical operations that may be implementedby the compute unit 460/660 circuitry are summarized in Logic Table 8-2illustrated in FIG. 8, including AND, OR, NOT, NOT, NAND, NOR, and XORlogical operations.

The columns of Logic Table 8-2 illustrated in FIG. 8 show a heading 880that includes the state of logic selection control signals. For example,the state of a first logic selection control signal is provided in row876 of the table 8-2, the state of a second logic selection controlsignal is provided in row 877 of the table 8-2, the state of a thirdlogic selection control signal is provided in row 878 of the table 8-2,and the state of a fourth logic selection control signal is provided inrow 879 of the table 8-2. The particular logical operation correspondingto the results is summarized in row 847 of the table 8-2.

FIGS. 9A-9C are schematic diagrams illustrating implementation of anumber of scheduling policies for performance of operations on datavalues in a memory device in accordance with a number of embodiments ofthe present disclosure. The embodiments illustrated in FIGS. 9A-9C areintended to illustrate configurations of data values (bits) moved viathe shared I/O lines and/or connection circuitry to a number of logicstripes 924 of a compute unit 960 indicated in successive time frames(operation cycles) that progress from top to bottom in the figures.

In some embodiments, the operation cycles may correspond to sequentialcycles previously described for movement of the data values, using theshared I/O lines, from a number of subrows corresponding to the numberof logic stripes. As such, each portion of an operation cycle, duringwhich an operation is performed by a compute component for one subrow'slogic stripe may, for example, last around 2 ns, during which time framemovement of data values from other subrows may be initiated for a nextoperation cycle. FIGS. 9A and 9B illustrate 16 logic stripes at 924-1,924-2, . . . , 924-16, which are labeled L1, L2, . . . , L16, and the 1Kcompute components and/or latches of each logic stripe holding (storing)a moved data value during a particular operation cycle is indicated bythe integer 1 being shown at that operation cycle.

As described herein, a memory device (e.g., 120 in FIGS. 1A and 1B) mayinclude an array of memory cells (e.g., 130 in FIG. 1A) and sensingcircuitry (e.g., 150 and 250 in FIGS. 1A and 2) selectably coupled tothe array of memory cells. The memory device may further include aplurality of I/O lines (e.g., 155, 355, 455, 555, 655, 755 in FIGS. 1and 3-7, respectively) shared as a data path for in data path computeoperations associated with the array. The plurality of shared I/O linesmay selectably couple the sensing circuitry to a compute component(e.g., 231, 331, 431, 631, 731 in FIGS. 2-4 and 6-7) in the data path ofthe shared I/O lines.

A controller (e.g., 140 in FIGS. 1A and 1B) may be associated with thearray. The controller 140 may be configured to direct movement, via thesensing circuitry, of a first data value from a first subrow (e.g.,428-1 in FIG. 4) of a first row of the array via the shared I/O lines toa first compute component (e.g., 431-1 in FIG. 4) of a first logicstripe (e.g., 424-1 in FIG. 4) in the data path and direct movement, viathe sensing circuitry, of a second data value from a second subrow(e.g., 428-2 in FIG. 4) of the first row via the shared I/O lines to asecond compute component (e.g., 431-1 in FIG. 4) of a second logicstripe (e.g., 424-2 in FIG. 4) in the data path.

The controller 140 may be configured to direct movement of the firstdata value from the first subrow (e.g., 428-1 in FIG. 4) in a firstoperation cycle and direct movement of the second data value from thesecond subrow (e.g., 428-2 in FIG. 4) in a second operation cycle. Forexample, the controller may be configured to direct, in the firstoperation cycle, a first parallel movement, via shared I/O lines, of anumber of a plurality of data values of the first subrow to acorresponding number of a plurality of first compute components of thefirst logic stripe. The controller may be further configured to direct,in the second operation cycle, a second parallel movement, via theshared I/O lines, of a number of a plurality of data values of thesecond subrow to a corresponding number of a plurality of second computecomponents of the second logic stripe. The controller 140 may beconfigured to direct, in the first operation cycle, initiation ofperformance of an operation (e.g., a logical operation) by a number of aplurality of first compute components on a corresponding number of aplurality of data values of the first subrow moved in parallel to thefirst logic stripe and direct, in the second operation cycle, initiationof performance of an operation by a number of a plurality of secondcompute components on a corresponding number of a plurality of datavalues of the second subrow moved in parallel to the second logicstripe.

As illustrated in FIG. 9A, the controller may be configured to implement“lockstep” scheduling. As such, the controller may be configured todirect, in the second operation cycle, the initiation of the performanceof the operation by the compute components of the first logic stripe(e.g., logic stripe 924-1) substantially simultaneously with initiationof the performance of the operation by the compute components of thesecond logic stripe (e.g., logic stripe 924-2). For example, initiationof the performance of the operations by the compute components in thelogic stripes L1, L2, . . . , L16 may be initiated after completion ofthe operation cycles and all the compute components and/or latches ofthe logic stripes have had data values moved thereto from thecorresponding subrows (e.g., 428-1, 428-2, . . . , 428-16 in FIG. 4) viathe shared I/O lines.

Alternatively or in addition, as illustrated in FIG. 9B, the controllermay be configured to implement “pipeline” scheduling. As such, thecontroller may be configured to direct, in the first operation cycle,the initiation of the performance of the operation on the number of theplurality of data values of the first subrow (e.g., 428-1 in FIG. 4) bythe compute components of the first logic stripe (e.g., logic stripe924-1) substantially simultaneously with movement, in the secondoperation cycle, of the number of the plurality of data values of thesecond subrow (e.g., 428-2 in FIG. 4) to the second logic stripe (e.g.,logic stripe 924-1).

For example, initiation of the performance of the operations by thecompute components in the logic stripe L1 may be initiated aftercompletion of loading (storage) of the data values to the computecomponents and/or latches of logic stripe L1 from a first subrow in thefirst operation cycle but prior to initiation of operations in logicstripes corresponding to subsequent subrows in subsequent operationcycles. However, in various embodiments, during performance of theoperations on the data values in logic stripe L1, movement of datavalues from the next subrow may be initiated for performance ofoperations thereon in the second logic stripe in the second operationcycle.

After storage of the data values in a particular operation cycle by thecompute components and/or latches of a particular logic stripe in FIG.9B, an original data value and/or a result of a logical operation on twooriginal data values may remain in the logic stripe, as indicated by theinteger 1. As such, the controller may direct performance of a sequenceof operations (e.g., any number and/or combination of AND, OR, NOT, NOT,NAND, NOR, and XOR logical operations) on data values stored and/ormoved to the same logic stripe, as shown in either the lockstep or thepipeline scheduling shown in FIGS. 9A and 9B.

Hence, because the operations have been initiated in L1 one operationcycle prior to the operations being initiated in L2 and the operationshave been initiated in L2 one operation cycle prior to the operationsbeing initiated in L3, etc., the completion of performance of thesequence of operations may be staggered. For example, as shown for thelast operation cycles at the bottom of FIG. 9B, the sequence ofoperations performed by L1 is completed one operation cycle before thesequence of operations performed by L2 is completed and the sequence ofoperations performed by L2 is completed one operation cycle before thesequence of operations performed by L3 is completed, etc.

Accordingly, the controller 140 may be configured to direct performanceof a sequential plurality of operations using a plurality of computecomponents of a single logic stripe. The sequential plurality ofoperations may be performed on a number of a plurality of data valuesmoved from a subrow of the array to the logic stripe that corresponds toa number of a plurality of the compute components and/or results ofpartial completion of the sequential plurality of operations prior tocompletion of a last of the sequential plurality of operations.

The controller 140 may be configured to apply a scheduling policy (e.g.,the lockstep, pipeline, and/or systolic scheduling policies describedherein) for performance of a first operation on a first data value and asecond operation on a second data value. Application of a particularscheduling policy may be based on an intended timing (e.g., as directedby the sequencer 532 and/or timing circuitry 533 of the controller 540)of storage of the first data value by the first compute component of thefirst logic stripe and timing of storage of the second data value by thesecond compute component of the second logic stripe. In variousembodiments, the first operation (e.g., first sequence of operations)may be a same operation as the second operation (e.g., second sequenceof operations) or the first operation may differ from the secondoperation. The controller may be configured to direct performance, basedon a particular scheduling policy, of the first operation on the firstdata value using the first compute component of the first logic stripeand direct performance, based on the scheduling policy, of the secondoperation on the second data value using the second compute component ofthe second logic stripe.

In some embodiments, the first compute component of the first logicstripe may be associated with a first latch. Hence, the controller maybe configured to direct movement, via the sensing circuitry, of a thirddata value from a third subrow of a second row (e.g., any subrow of adifferent row) of the array via the shared I/O lines to the first latchof the first logic stripe and direct performance of a logical operationon the first data value from the first row stored by the first computecomponent and the third data value from the second row stored by thefirst latch. In some embodiments, the first latch may include or be asense amplifier (e.g., sense amplifier 206 shown in and described inconnection with FIG. 2 and elsewhere herein) to store the third datavalue.

The plurality of shared I/O lines described herein may be configured, asdirected by the controller, to selectably couple to the sensingcircuitry to selectably enable, via a multiplexer (which may include orbe the column select circuitry shown at 358 and described in connectionwith FIG. 3), parallel movement of a number of a plurality of datavalues stored by the sensing circuitry that corresponds to a number of aplurality of memory cells of the first subrow of the first row. Themultiplexer may be configured to move the number of the plurality ofdata values to a corresponding number of a plurality of first computecomponents of the first logic stripe, as described herein. The number ofthe plurality of memory cells of the first subrow (e.g., 428-1) maycorrespond to the number of the plurality of first compute components(e.g., 431-1) of the first logic stripe (e.g., 424-1).

Alternatively or in addition, as illustrated in FIG. 9C, the controllermay be configured to implement “systolic” scheduling. As used herein,systolic is intended to mean data is input to flow through a network ofhard-wired in data path processor nodes (e.g., compute components inlogic stripes, as described herein) to combine, process, merge, and/orsort the data input from rows and/or subrows of a memory array (e.g., aDRAM-style array shown at 130) into a derived end result. Each node mayindependently compute a partial result, store the partial result withinitself, and move (e.g., transfer and/or copy) the partial resultdownstream for further processing of the partial result untilcomputation and output of the derived end result (e.g., for storage in anumber of rows and/or subrows of the memory array. Systolic arrays maybe referred to as multiple instruction multiple data (MIMD)architectures.

A first batch of unprocessed data (e.g., two data values) that has beeninput into a first logic stripe (e.g., a compute component and a latchof logic stripe 924-1 in FIG. 9C) in a sequence of, for example, sixlogic stripes (e.g., region 924-A) may be processed and moved (e.g.,transferred and/or copied) to another (e.g., a second) logic stripe(e.g., a compute component and a latch of logic stripe 924-2) forsystolic processing. In some embodiments, a second batch of unprocesseddata may be input into the first logic stripe, followed by a third batchwhen the second batch has been moved (e.g., transferred and/or copied)to the second logic stripe and the first batch has been moved (e.g.,transferred and/or copied) to a third logic stripe, and so on.

Latency, as described herein, is intended to mean a period of timebetween input of a first batch of unprocessed data to a first logicstripe for performance of a first operation and output of the firstbatch as completely processed data. For example, when a sequence of sixinstructions has been executed and the processed data has been outputafter the sixth operation cycle (e.g., after performing a sixthoperation in the sequence of six operations), the latency of output fromthe sequence of six logic stripes has expired.

As such, because additional batches of data may, in some embodiments, beinput after every operation cycle, every operation cycle of the memorydevice following the latency may output a completely processed batch ofdata. In some embodiments, more than one completely processed batch ofdata may be output per operation cycle, for example, when substantiallysimultaneously using multiple regions of the logic stripes (e.g., asshown by regions 924-A, 924-B, and 924-C in FIG. 9C).

A new batch of unprocessed data (e.g., two data values) may, in someembodiments, be input into the first logic stripe of a region afterpassage of a number of operation cycles (e.g., passage of 1-5 operationcycles after the first operation in the sequence of six operations hasbeen performed), rather than inputting unprocessed data into the firstlogic stripe in the sequence after each operation has been performedtherein and the result data value has been moved to the next logicstripe. Such a delay in input of data values into the first logic stripemay introduce a buffer in the logic stripes between, for example, wherethe first OR operation in the previously presented sequence of sixlogical operations has progressed in the six logic stripes forperformance of the other logical operations in the sequence andintroduction of new data values into the first logic stripe forperformance of the first OR operation to begin another sequence ofoperations. The number of operation cycles included in such a buffer maybe determined by factors such as possible variance and/orunpredictability in time utilized for performance of different logicaloperations in the sequence and/or in time utilized for performance ofoperations on data values moved to the first logic stripe, via theshared I/O lines, from the subrows of a memory array versus forperformance of operations on data values previously stored by theplurality of latches associated with a compute component of the logicstripe, among other possible factors.

Regions 924-A, 924-B, and 924-C are each shown to include six logicstripes (e.g., logic stripes 924-1 (L1), . . . , 924-6 (L6) in region924-A, logic stripes 924-7 (L7), 924-12 (L12) in region 924-B, and logicstripes 924-13 (L13) 924-18 (L18) in region 924-C) to each perform alogical operation in a sequence of six logical operations by way ofexample and not by way of limitation. For example, each region mayinclude more or less than six logic stripes to perform a sequence havingmore or less than six logical operations and/or there may be more orless than three regions, such that there may be more or less than thetotal of 18 logic stripes (e.g., 924-1, . . . , 924-18) in a computeunit 960, as shown in FIG. 9C.

Many applications may involve input of a lengthy and/or continuousstream of data for data processing. Such applications can, for example,include signal processing, image processing, speech recognition, packetinspection, comma separated value (CSV) parsing, alpha blend graphicsoperations, matrix multiplication, and neural nets, among otherapplications, that may operate on a lengthy and/or continuous stream ofdata. In some embodiments, as shown in FIG. 9C, this unprocessed datamay be input into a figurative left side of an array (e.g., compute unit960) of logic stripes and the data may be processed by execution of asequence of instructions in consecutive logic stripes, and the result(s)may be output at the figurative left side of the sequence(s) of logicstripes.

Accordingly, as described herein, a memory device (e.g., 120 in FIGS. 1Aand 1B) may include an array of memory cells (e.g., 130 in FIG. 1A) andsensing circuitry (e.g., 150 and 250 in FIGS. 1A and 2) selectablycoupled to the array of memory cells. The sensing circuitry may, invarious embodiments, include a number of sense amplifiers (e.g., asshown at 206 and described in connection with FIG. 2 and elsewhereherein). The memory device may include a plurality of I/O lines (e.g.,155, 355, 455, 555, 655, 755 in FIGS. 1 and 3-7, respectively) shared asa data path for in data path compute operations associated with thearray. The plurality of shared I/O lines may selectably couple thesensing circuitry to a compute component (e.g., 231, 331, 431, 631, 731in FIGS. 2-4 and 6-7) in the data path of the shared I/O lines. Thememory device may include a plurality of logic stripes (e.g., 924-1, . .. , 924-18) in the data path. The plurality of logic stripes may includea first logic stripe (e.g., 924-1) that may include a number of aplurality of first compute components (e.g., 631-1, . . . , 631-Z) thatcorresponds to a number of a plurality of memory cells (not shown) of afirst subrow (e.g., 428-1) of a row (e.g., 319) of the array;

A controller (e.g., 140 in FIGS. 1A and 1B) may be associated with thearray. The controller 140 may be configured to direct movement, via thesensing circuitry, of a first data value from a first subrow (e.g.,428-1) of a first row of the array via the shared I/O lines to a firstcompute component of a first logic stripe (e.g., L1) in the data path.The controller 140 may be further configured to direct performance of afirst operation on the first data value from the first subrow using thefirst compute component and to direct movement of a second data value,resulting from performance of the first operation, from the first logicstripe (e.g., L1) via connection circuitry (e.g., 232) to a secondcompute component (e.g., a compute component corresponding to theposition of the first compute component in the first logic stripe) of asecond logic stripe (e.g., L2) in the data path.

The controller may be configured to direct performance of a secondoperation on the second data value using the second compute component ofthe second logic stripe (e.g., L2). The controller may be configured todirect movement of a third data value, resulting from performance of thesecond operation, from the second logic stripe (e.g., L2) via theconnection circuitry (e.g., 232) to a third compute component (e.g., acompute component corresponding to the position of the first computecomponent in the first logic stripe and the position of the secondcompute component in the second logic stripe) of a third logic stripe(e.g., L3).

Accordingly, the controller may be configured to direct performance of anumber of a plurality of logical operation sequences (e.g., the numberof operation cycles shown from top to bottom in each region 924-A,924-B, and/or 924-C) by systolic movement of logical operation resultsthrough a corresponding number of a plurality of logic stripes (e.g.,L1, . . . , L6 in region 924-A, L7, . . . , L12 in region 924-B, andL13, . . . , L18 in region 924-C). A number of a plurality of thelogical operation results may be computed using a corresponding numberof a plurality of compute components of the corresponding number of theplurality of logic stripes. For example, the number of computecomponents (e.g., 631-1, . . . , 631-Z) in a first logic stripe (e.g.,L1), or all logic stripes (e.g., L1, . . . , L6) in a region (e.g.,924-A) may correspond to the number of logical operation results (e.g.,output from logic stripe L6).

In various embodiments, the plurality of logical operation sequences(e.g., shown in regions 924-A, 924-B, and 924-C) may each be a samesequence of logical operations (e.g., a sequence of OR, AND, XOR, OR,AND, and NOT) or the plurality of logical operation sequences mayinclude at least one sequence of logical operations that is differentfrom other sequences of logical operations. For example, the pluralityof logic stripes may be configured as a number of a plurality of regions(e.g., 924-A, 924-B, and 924-C) that corresponds to the number of theplurality of sequences of logical operations. In some embodiments, thecontroller may be configured to direct initiation of the plurality ofsequences of logical operations substantially simultaneously, where eachof the plurality of sequences of logical operations is directed to beperformed in a different one of the plurality of regions. The number ofthe plurality of regions (e.g., three regions 924-A, 924-B, and 924-C)may correspond to a number of a plurality of subrows (e.g., subrows428-1, . . . , 428-18) of the row of the array divided by the number ofthe plurality of sequences of logical operations (e.g., three sequencesof logical operations in the three regions 924-A, 924-B, and 924-C).

The controller may be configured to direct, in a first operation cycle(e.g., a first operation cycle from the top in first region 924-A),initiation of performance of a first logical operation sequence on thefirst data value from the first subrow (e.g., 428-1) by a number of aplurality of first compute components on a corresponding number of aplurality of logic stripes (e.g., compute component 631-1 in each logicstripe) in the first region. The controller may be configured to direct,in a second operation cycle (e.g., a second operation cycle from the topin first region 924-A), initiation of performance of a second logicaloperation sequence on a second data value from a second subrow (e.g.,428-2) by a number of a plurality of second compute components on acorresponding number of a plurality of logic stripes (e.g., computecomponent 631-1 in each logic stripe) in a second region (e.g., region924-B).

The controller may be configured to direct, in the first operationcycle, the performance of the first logical operation sequence on thefirst data value by the compute components of the logic stripes in thefirst region. The controller may be further configured to directmovement, in the second operation cycle, of the first data value fromthe first subrow via the shared I/O lines to the first compute componentin the first region substantially simultaneously with movement of thesecond data value from the second subrow, via the shared I/O lines, to asecond compute component in the second region.

The controller may be configured to direct, in the second operationcycle, the performance of the first logical operation sequence on thefirst data value by the compute components of the logic stripes (e.g.,L1, . . . , L6) in the first region (e.g., region 924-A) substantiallysimultaneously with performance of the second logical operation sequenceon the second data value by the compute components of the logic stripes(e.g., L7, . . . , L12) in the second region (e.g., region 924-B).Similarly, in the third operation cycle, the controller may beconfigured to direct the performance of the first logical operationsequence on the first data value by the compute components of the logicstripes (e.g., L1, . . . , L6) in the first region (e.g., region 924-A)substantially simultaneously with performance of the second logicaloperation sequence on the second data value by the compute components ofthe logic stripes (e.g., L7, . . . , L12) in the second region (e.g.,region 924-B) and with performance of the third logical operationsequence on a third data value by the compute components of the logicstripes (e.g., L13, . . . , L18) in the third region (e.g., region924-C).

Hence, because the logical operation sequence has been initiated in L1of region 924-A one operation cycle prior to the logical operationsequence being initiated in L7 of region 924-B and the logical operationsequence being initiated in L7 one operation cycle prior to theoperations being initiated in L13, the completion of performance of thesequence of logical operations may be staggered. For example, as shownfor the last operation cycles at the bottom of FIG. 9C, the sequence ofoperations initiated by L1 is completed one operation cycle before thesequence of operations initiated by L7 is completed and the sequence ofoperations initiated by L7 is completed one operation cycle before thesequence of operations initiated by L13 is completed.

The number of operation cycles illustrated top to bottom in FIGS. 9A,9B, and 9C are shown by way of example and not by way of limitation. Forexample, although the number of operation cycles is shown to differ ineach figure, the number of operation cycles in one or more of thefigures may be the same as or differ from the number of operation cyclesin another figure.

The apparatuses and methods for in data path compute operationsdescribed herein include a number of changes to operation of acontroller of, for example, a PIM DRAM implementation. For example, thecontroller may coordinate assignment of instructions for separateoperations of a sequence of operations to a number of sub-controllers(not shown), such that each sub-controller may direct a separateoperation with respect to data values stored in each of, for example,the banks 121, bank sections 423, subarrays 425-1, . . . , 425-32,compute units 660, logic stripe 924-1, . . . , 924-18, and/or regions924-A, 924-B, 924-C. For example, for logic stripes having 1K computecomponents per logic stripe, 1K different logical operation sequencesmay potentially be initiated (e.g., substantially simultaneously), asdirected by the controller 140 and/or a corresponding number ofsub-controllers.

For example, a sub-controller may be configured to direct (e.g., byexecution of instructions) moving (e.g., transferring and/or copying)input data values from subrows of a row, via sensing circuitry, to aparticular compute component in a particular logic stripe in aparticular compute unit. A sub-controller may be configured to direct,after each performance of a logical operation of the sequence, moving(e.g., transferring and/or copying) the resultant processed data valuefrom the logic stripe in which the operation was performed to acorresponding compute component in another (e.g., next) logic stripe forperformance of the next operation in the sequence of operations (e.g., asystolic sequence).

An advantage of the systolic data movement for in data path computeoperations described herein may include that a memory device configuredas such may effectively make use of massive parallelization andcomputational power. For example, the memory device may extend itscomputation and execution capabilities in order to substantiallysimultaneously perform multiple, independent, and/or unique operationsin a sequence of operations while outputting the processed data valuesin parallel from one operation to the next.

Accordingly, embodiments described herein provide a method for operatinga memory device for in data path compute operations (e.g., by systolicdata movement, as described herein) performed by execution ofnon-transitory instructions by a processing resource. As describedherein, the method may include performing a first operation on a datavalue moved from a memory cell in a first subrow in a first row of anarray of memory cells to a first logic stripe, the data value moved viaan I/O shared by the array and a plurality of logic stripes in the datapath. The method also may include moving the data value, upon which thefirst operation has been performed, to a selected second logic stripevia connection circuitry selectably coupling the first logic stripe andthe second logic stripe and performing a second operation on the datavalue moved to the second logic stripe.

The method may further include performing the first operation, movingthe data value, and performing the second operation by execution of aset of non-transitory instructions. The set of non-transitoryinstructions may, as described herein, be executed by a controllerand/or a sub-controller via a processing resource for the array, theshared I/O line, the plurality of logic stripes, and/or the connectioncircuitry, among other components.

The method may further include performing the first operation using afirst compute component of the first logic stripe and performing thesecond operation using a second compute component (e.g., a computecomponent corresponding to the position of the first compute componentin the first logic stripe) of the second logic stripe. In variousembodiments, the first operation and the second operation may beperformed as directed by the controller and/or a sub-controller. Thefirst operation and the second operation may be performed as a first twooperations in a number of a plurality of logical operations (e.g., sixlogical operations in a logical operation sequence) that corresponds toa number of the plurality of logic stripes (e.g., L1, . . . , L6 inregion 924-A, L7, . . . , L12 in region 924-B, and L13, . . . , L18 inregion 924-C). The plurality of logical operations may be a sequentialplurality of logical operations performed to yield a result that differsfrom the data value moved from the memory cell in the first subrow.

The method may further include moving, via a shared I/O line, a resultof completion of a last operation of the sequential plurality of logicaloperations from a last logic stripe (e.g., L6 in region 924-A, L12 inregion 924-B, and/or L18 in region 924-C) to a selected memory cell in arow of the array. The last logic stripe is intended to mean a logicstripe in which the last operation of the sequential plurality oflogical operations is performed. The row of the array for storage of theresult may, in various embodiments, be a row (e.g., in a DRAM memorydevice) in a same or a different bank, bank section, quadrant, and/orsub array relative to the subrow of a row, or subrows of rows, fromwhich input data values were previously moved.

Embodiments of the present disclosure may increase a speed, rate, and/orefficiency of data movement in a PIM array by using an improved datapath (e.g., a shared I/O line) of a DRAM implementation. As describedherein, a source location and a destination location in a pair of banklocations in a memory device may be configured to couple via a pluralityof shared I/O lines. A bank in the memory device can, as describedherein, include an array of memory cells, sensing circuitry coupled tothe array via a plurality of sense lines, the sensing circuitryincluding sense amplifiers and compute components, and compute unitcircuitry coupled to the array and sensing circuitry via a plurality ofshared I/O lines, the compute unit circuitry including a plurality oflogic stripes having sense amplifiers and compute components, configuredto implement operations. A controller is coupled to the array, thesensing circuitry, and the compute unit circuitry.

A command may be received from the controller to move (e.g., copy,transfer, and/or transport) data values from a source location in thearray to a destination location in the compute unit circuitry. The datavalues may be moved from the source location to the destination locationusing the sense amplifiers and/or compute components via the pluralityof shared I/O lines.

While example embodiments including various combinations andconfigurations of sensing circuitry, sense amplifiers, computecomponents, latches, logic stripes, shared I/O lines, column selectcircuitry, connection circuitry, multiplexers, etc., have beenillustrated and described herein, embodiments of the present disclosureare not limited to those combinations explicitly recited herein. Othercombinations and configurations of the sensing circuitry, senseamplifiers, compute components, latches, logic stripes, shared I/Olines, column select circuitry, connection circuitry, multiplexers,etc., disclosed herein are expressly included within the scope of thisdisclosure.

Although specific embodiments have been illustrated and describedherein, those of ordinary skill in the art will appreciate that anarrangement calculated to achieve the same results may be substitutedfor the specific embodiments shown. This disclosure is intended to coveradaptations or variations of one or more embodiments of the presentdisclosure. It is to be understood that the above description has beenmade in an illustrative fashion, and not a restrictive one. Combinationof the above embodiments, and other embodiments not specificallydescribed herein will be apparent to those of skill in the art uponreviewing the above description. The scope of the one or moreembodiments of the present disclosure includes other applications inwhich the above structures and processes are used. Therefore, the scopeof one or more embodiments of the present disclosure should bedetermined with reference to the appended claims, along with the fullrange of equivalents to which such claims are entitled.

In the foregoing Detailed Description, some features are groupedtogether in a single embodiment for the purpose of streamlining thedisclosure. This method of disclosure is not to be interpreted asreflecting an intention that the disclosed embodiments of the presentdisclosure have to use more features than are expressly recited in eachclaim. Rather, as the following claims reflect, inventive subject matterlies in less than all features of a single disclosed embodiment. Thus,the following claims are hereby incorporated into the DetailedDescription, with each claim standing on its own as a separateembodiment.

What is claimed is:
 1. An apparatus, comprising: an array of memorycells; sensing circuitry selectably coupled to the array of memorycells; a plurality of input/output (I/O) lines shared as a data path forin data path compute operations associated with the array; and wherein:the plurality of shared I/O lines selectably couples a first subrow of arow of the array via the sensing circuitry to a first compute componentin the data path to move a first data value from the first subrow to thefirst compute component; the plurality of shared I/O lines selectablycouples a second subrow of the respective row via the sensing circuitryto a second compute component in the data path to move a second datavalue from the second subrow to the second compute component; and acontroller configured to direct the first compute component to performan operation on the first data value moved from the first subrowsubstantially simultaneously with movement of the second data value fromthe second subrow to the second compute component.
 2. The apparatus ofclaim 1, wherein the data path further comprises: a first logic stripethat includes the first compute component; and a second logic stripethat includes the second compute component.
 3. The apparatus of claim 1,wherein the data path further comprises: a first logic stripe includinga number of a plurality of first compute components that corresponds toa number of a plurality of memory cells of the first subrow; and asecond logic stripe including a number of a plurality of second computecomponents that corresponds to a number of a plurality of memory cellsof the second subrow.
 4. The apparatus of claim 1, wherein the data pathfurther comprises: a compute unit including a plurality of logic stripesthat each includes a plurality of compute components; and wherein eachof the plurality of compute components is associated with at least oneof the plurality of shared I/O lines local to the array.
 5. Theapparatus of claim 1, wherein the data path further comprises: a numberof a plurality of logic stripes that corresponds to a number of aplurality of subrows of the respective row.
 6. The apparatus of claim 1,wherein the data path further comprises: a number of the plurality ofshared I/O lines that corresponds to a number of a plurality of memorycells of a subrow of the respective row; and wherein a logic stripeincludes a number of a plurality of compute components that correspondsto the number of the plurality of memory cells of the subrow coupled toa respective logic stripe.
 7. The apparatus of claim 1, wherein thearray is a dynamic random access memory (DRAM) array and the sensingcircuitry includes a sense amplifier.
 8. An apparatus, comprising: anarray of memory cells; sensing circuitry selectably coupled to the arrayof memory cells; a plurality of input/output (I/O) lines shared as adata path for in data path compute operations associated with the array,wherein the plurality of shared I/O lines selectably couples the sensingcircuitry to a compute component in the data path of the shared I/Olines; and a controller associated with the array, the controllerconfigured to: direct movement, via the sensing circuitry, of a firstdata value from a first subrow of a first row of the array via theshared I/O lines to a first compute component of a first logic stripe inthe data path; and direct movement, via the sensing circuitry, of asecond data value from a second subrow of the first row via the sharedI/O lines to a second compute component of a second logic stripe in thedata path.
 9. The apparatus of claim 8, wherein the controller isfurther configured to: direct movement of the first data value from thefirst subrow in a first operation cycle; and direct movement of thesecond data value from the second subrow in a second operation cycle.10. The apparatus of claim 8, wherein the controller is furtherconfigured to: direct, in a first operation cycle, a first parallelmovement of a number of a plurality of data values of the first subrowto a corresponding number of a plurality of first compute components ofthe first logic stripe; and direct, in a second operation cycle, asecond parallel movement of a number of a plurality of data values ofthe second subrow to a corresponding number of a plurality of secondcompute components of the second logic stripe.
 11. The apparatus ofclaim 8, wherein the controller is further configured to: direct, in afirst operation cycle, initiation of performance of an operation by anumber of a plurality of first compute components on a correspondingnumber of a plurality of data values of the first subrow moved inparallel to the first logic stripe; and direct, in a second operationcycle, initiation of performance of an operation by a number of aplurality of second compute components on a corresponding number of aplurality of data values of the second subrow moved in parallel to thesecond logic stripe.
 12. The apparatus of claim 11, wherein thecontroller is further configured to: direct, in the first operationcycle, the initiation of the performance of the operation by the computecomponents of the first logic stripe substantially simultaneously withmovement, in the second operation cycle, of the number of the pluralityof data values of the second subrow to the second logic stripe.
 13. Theapparatus of claim 11, wherein the controller is further configured to:direct, in the second operation cycle, the initiation of the performanceof the operation by the compute components of the first logic stripesubstantially simultaneously with initiation of the performance of theoperation by the compute components of the second logic stripe.
 14. Theapparatus of claim 8, wherein the controller is further configured to:direct performance of a sequential plurality of operations using aplurality of compute components of a single logic stripe; and whereinthe sequential plurality of operations is performed on: a number of aplurality of data values moved from a subrow of the array to the logicstripe that corresponds to a number of a plurality of the computecomponents; and results of partial completion of the sequentialplurality of operations prior to completion of a last of the sequentialplurality of operations.
 15. The apparatus of claim 8, wherein thecontroller is further configured to: apply a scheduling policy forperformance of a first operation on the first data value and a secondoperation on the second data value based on: timing of storage of thefirst data value by the first compute component of the first logicstripe; and timing of storage of the second data value by the secondcompute component of the second logic stripe.
 16. The apparatus of claim15, wherein the first operation differs from the second operation. 17.The apparatus of claim 15, wherein the first operation is a sameoperation as the second operation.
 18. The apparatus of claim 8, whereinthe controller is further configured to: direct performance, based on ascheduling policy, of the first operation on the first data value usingthe first compute component of the first logic stripe; and directperformance, based on the scheduling policy, of the second operation onthe second data value using the second compute component of the secondlogic stripe.
 19. The apparatus of claim 8, wherein: the first computecomponent of the first logic stripe is associated with a first latch;and the controller is further configured to: direct movement, via thesensing circuitry, of a third data value from a third subrow of a secondrow of the array via the shared I/O lines to the first latch of thefirst logic stripe; and direct performance of a logical operation on thefirst data value from the first row stored by the first computecomponent and the third data value from the second row stored by thefirst latch.
 20. The apparatus of claim 19, wherein the first latchincludes a sense amplifier to store the third data value.
 21. Theapparatus of claim 8, wherein: the plurality of shared I/O lines isconfigured, as directed by the controller, to: selectably couple to thesensing circuitry to selectably enable, via a multiplexer, parallelmovement of a number of a plurality of data values stored by the sensingcircuitry that corresponds to a number of a plurality of memory cells ofthe first subrow of the first row; and move the number of the pluralityof data values to a corresponding number of a plurality of first computecomponents of the first logic stripe; and wherein the number of theplurality of memory cells of the first subrow corresponds to the numberof the plurality of first compute components of the first logic stripe.22. An apparatus, comprising: an array of memory cells; sensingcircuitry selectably coupled to the array of memory cells, the sensingcircuitry including a sense amplifier; a plurality of input/output (I/O)lines shared as a data path for in data path compute operationsassociated with the array, wherein the plurality of shared I/O linesselectably couple the sensing circuitry to a compute component in thedata path of the shared I/O lines; a plurality of logic stripes in thedata path, including a first logic stripe including a number of aplurality of first compute components that corresponds to a number of aplurality of memory cells of a first subrow of a row of the array; and acontroller associated with the array, the controller configured to:direct movement, via the sensing circuitry, of a first data value from afirst subrow of a first row of the array via the shared I/O lines to afirst compute component of a first logic stripe in the data path; directperformance of a first operation on the first data value from the firstsubrow using the first compute component; and direct movement of asecond data value, resulting from performance of the first operation,from the first logic stripe via connection circuitry to a second computecomponent of a second logic stripe in the data path.
 23. The apparatusof claim 22, wherein the controller is further configured to: directperformance of a second operation on the second data value using thesecond compute component of the second logic stripe.
 24. The apparatusof claim 23, wherein the controller is further configured to: directmovement of a third data value, resulting from performance of the secondoperation, from the second logic stripe via the connection circuitry toa third compute component of a third logic stripe.
 25. The apparatus ofclaim 22, wherein the controller is further configured to: directperformance of a number of a plurality of logical operation sequences bysystolic movement of logical operation results through a correspondingnumber of a plurality of logic stripes; and wherein a number of aplurality of the logical operation results are computed using acorresponding number of a plurality of compute components of thecorresponding number of the plurality of logic stripes.
 26. Theapparatus of claim 25, wherein the plurality of logical operationsequences is each a same sequence of logical operations.
 27. Theapparatus of claim 25, wherein the plurality of logical operationsequences includes a sequence of logical operations that is differentfrom other sequences of logical operations.
 28. The apparatus of claim22, wherein: the plurality of logic stripes is configured as a number ofa plurality of regions that corresponds to a number of a plurality ofsequences of logical operations; and the controller is furtherconfigured to: direct initiation of the plurality of sequences oflogical operations substantially simultaneously, wherein each of theplurality of sequences of logical operations is directed to be performedin a different one of the plurality of regions.
 29. The apparatus ofclaim 28, wherein: the number of the plurality of regions corresponds toa number of a plurality of subrows of the row of the array divided bythe number of the plurality of sequences of logical operations.
 30. Theapparatus of claim 22, wherein the controller is further configured to:direct, in a first operation cycle, initiation of performance of a firstlogical operation sequence on the first data value from the first subrowby a number of a plurality of first compute components on acorresponding number of a plurality of logic stripes in a first region;and direct, in a second operation cycle, initiation of performance of asecond logical operation sequence on a second data value from a secondsubrow by a number of a plurality of second compute components on acorresponding number of a plurality of logic stripes in a second region.31. The apparatus of claim 30, wherein the controller is furtherconfigured to: direct, in the first operation cycle, the performance ofthe first logical operation sequence on the first data value by thecompute components of the logic stripes in the first region; and directmovement, in the second operation cycle, of the first data value fromthe first subrow via the shared I/O lines to the first compute componentin the first region substantially simultaneously with movement of asecond data value from the second subrow via the shared I/O lines to asecond compute component in the second region.
 32. The apparatus ofclaim 31, wherein the controller is further configured to: direct, inthe second operation cycle, the performance of the first logicaloperation sequence on the first data value by the compute components ofthe logic stripes in the first region substantially simultaneously withperformance of the second logical operation sequence on the second datavalue by the compute components of the logic stripes in the secondregion.
 33. A method for operating a memory device, comprising:performing a first operation on a data value moved from a memory cell ina first subrow in a first row of an array of memory cells to a firstlogic stripe for in data path compute operations, the data value movedvia an input/output line (I/O) shared by the array and a plurality oflogic stripes in the data path; moving the data value, upon which thefirst operation has been performed, to a selected second logic stripevia connection circuitry selectably coupling the first logic stripe andthe second logic stripe; and performing a second operation on the datavalue moved to the second logic stripe.
 34. The method of claim 33,wherein the method further comprises: performing the first operation,moving the data value, and performing the second operation by executionof a set of non-transitory instructions; and wherein the set ofnon-transitory instructions is executed by a controller via a processingresource for the array, the shared I/O line, the plurality of logicstripes, and the connection circuitry.
 35. The method of claim 33,wherein the method further comprises: performing the first operationusing a first compute component of the first logic stripe; performingthe second operation using a second compute component of the secondlogic stripe; and performing the first operation and the secondoperation as directed by a controller.
 36. The method of claim 33,wherein the method further comprises: performing the first operation andthe second operation as a first two operations in a number of aplurality of logical operations that corresponds to a number of theplurality of logic stripes; and wherein the plurality of logicaloperations is a sequential plurality of logical operations performed toyield a result that differs from the data value moved from the memorycell in the first subrow.
 37. The method of claim 33, wherein the methodfurther comprises: moving, via a shared I/O line, a result of completionof a last operation of the sequential plurality of logical operationsfrom a last logic stripe to a selected memory cell in a row of thearray; and wherein the last logic stripe is a logic stripe in which thelast operation is performed.